Metal-insulator transitions and other electronic transitions) 72.80.Ga (Transition-metal compounds)Abstract. Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maximum at T ~ 100 K, is observed. For W-doped VO2 films, it is shown that substitution of V 4+ with W 6+ results in a decrease of the temperature of metal-insulator transition.Also, it has been shown that the doping of the initial films with ~3 at.% of W reduces the statistical scatter in the threshold parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films.