Superconductivity in Ba3La2LuCu6Oy

Watanabe, T.; Kinoshita, Kyôichi; Shibata, Hiroyuki; Matsuda, Azusa; Asano, Y.; Yamada, Tomoaki

doi:10.1143/jjap.27.l1245

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…The dominant feature in all samples is the spectrum from the neutral substitutional nitrogen center (N S 0 ). From these results it is possible to calculate the total concentration of neutral substitutional nitrogen, as shown in the figure [14].…”

Section: Absorption Spectroscopymentioning

confidence: 99%

“…The CVD growth of diamond easily incorporates nitrogen impurities from the gas phase, often observed as single substitutional nitrogen [13,14], nitrogen-vacancy complexes [15], and nitrogenvacancy-hydrogen defects [16]. Also ubiquitous to CVD growth is the formation of crystallographic twin planes and complicated twin related grain clusters [17,18].…”

Section: Introductionmentioning

confidence: 99%

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Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing

Charles

Butler²,

Feygelson³

et al. 2004

phys. stat. sol. (a)

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A 820 micron thick single crystal diamond layer epitaxially grown on a single crystal diamond seed (high pressure, high temperature grown synthetic) by microwave plasma chemical vapor deposition with added nitrogen is characterized by an array of analytical techniques before and after annealing the material at high pressures and temperatures. The most striking result is the conversion of the initially dark colored, highly absorbing CVD layer to clear, transparent material after a 1 hour anneal at 7 GPa and 2200 °C. IR absorption in the region of the CH stretching modes, 2800 to 3107 cm–1 shows a remarkable sharpening and persistence of the observed modes. IR absorption in the one‐phonon region also indicates the presence of significant concentrations of ionized single substitutional nitrogen in the as grown material. EPR indicates a concentration of neutral single substitutional nitrogen at lattice sites of ca. 1 ppm, and this changes by less then 30% when annealed at temperatures up to 2200 °C. EPR also detects 0.1 ppm of the negatively charged nitrogen‐vacancy‐hydrogen complex in the as grown diamond, but this anneals out by 1900 °C, the negatively charged nitrogen‐vacancy complex is below the EPR detection limit in these samples of about 0.1 ppm. Photoluminescence detects the presence of neutral and negatively charged nitrogen‐vacancy complexes in the as grown material, and the formation of new, unassigned bands principally in the 800 to 900 nm region. The total detected nitrogen concentration in the sample is ca. 1.5 ppm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Absorption Spectroscopymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing

Charles

Butler²,

Feygelson³

et al. 2004

phys. stat. sol. (a)

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“…LazLuBa3CutO14+~ with w=0.3 and crystal structure [448] derived from that of the YBa2Cu307 type by cation ordering. The oxygen saturated phase (at ambient oxygen pressure) is tetragonal [448] {P4/mmm; 546.6, 1161.5} but becomes orthorhombic upon oxidation at Po2 = 5 MPa and also superconducting with Tc = 40 K [448].…”

Section: Intermediate Oxides Genuine Quintenary Oxides Appear Rarelymentioning

confidence: 99%

“…The oxygen saturated phase (at ambient oxygen pressure) is tetragonal [448] {P4/mmm; 546.6, 1161.5} but becomes orthorhombic upon oxidation at Po2 = 5 MPa and also superconducting with Tc = 40 K [448].…”

Section: Intermediate Oxides Genuine Quintenary Oxides Appear Rarelymentioning

confidence: 99%

Phase diagrams for the YBa2Cu3O7 family — ANNO 1996

Karen

Kjekshus

1997

Journal of Thermal Analysis

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Phase diagrams for cupratcs of alkaline earth and rare earth elements are presented, covering binary to quintenary oxides and including selected solid solution series with other elements. Elementary crystal chemical data are included for identification of the occurring phases. Chemical stability is discussed with respect to the high-temperature reactions with Lewis acids like CO2, protons, etc. Particularly the occurrence of oxide carbonates is consistently pointed out as one of the possible reasons for contradictory results in phase diagrams which comprise oxides with high basicity.

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Determination of the oxidizing ability of HTSC materials containing two elements with a variable degree of oxidation

Pantaler¹,

Lebed²,

Blank³

1991

Bull. Mater. Sci.

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The presence of mixed valence states of elements is supposed to be a common characteristic feature of the high-Tc superconductors, based on copper oxides. Methods have been suggested for the determination of Cu(llI) in the Y-Ba-Cu-O ceramics and separate determination of two oxidants: Bi(V) and Cu(llI), TI(IlI) and Cu(llI) in the corresponding materials. Compounds of Bi(V) oxidize in the ions of Mn(II) to MnO2 in the acidic medium. Active oxygen, bound to Cu(Ill) is isolated, not oxidizing Mn(ll). MnO,~ is titrated then with a solution of Felll) sulphate. For the determination of TI(III) the sample is dissolved in the acid, Cu(III) is reduced to Cu(ll) and TI(III) is titrated with the hydroquinone solution. The compounds of Bi(V), TI(IIIt and Cu(lll), having high oxidation-reduction potentials can oxidize the complex Co(II)-EDTA to Co(III)-EDTA. The colour intensity of the latter is proportional to the content of Cu(Ill) or to the sum of Bi(V) and Cu(llI) or TI(III) and Cu(llIt. The content of Cu(III) in Bi-and Tl-containing materials is determined by the difference.

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Superconductivity in Ba₃La₂LuCu₆O_y

Cited by 5 publications

References 7 publications

Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing

Characterization of nitrogen doped chemical vapor deposited single crystal diamond before and after high pressure, high temperature annealing

Phase diagrams for the YBa2Cu3O7 family — ANNO 1996

Determination of the oxidizing ability of HTSC materials containing two elements with a variable degree of oxidation

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