2010
DOI: 10.1088/0953-2048/24/1/015010
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Superconductivity and magnetism in FeSe thin films grown by metal–organic chemical vapor deposition

Abstract: High quality FeSe thin films with different ratios of Fe to Se have been grown on GaAs and Si substrates by changing the flow rate of Fe(CO)5 in a low-pressure metal–organic chemical vapor deposition (MOCVD) system. For both substrates, the films grown at a low flow rate of Fe(CO)5 are non-ferromagnetic and exhibit superconductivity at low temperature, while those grown at a high flow rate of Fe(CO)5 display ferromagnetic and semiconducting behaviors. Our results suggest that the superconducting phase does e… Show more

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Cited by 27 publications
(20 citation statements)
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“…Thin films were synthesized with other approaches such as metal-organic chemical vapor deposition (MOCVD) [29,30], molecular beam epitaxy (MBE) [31], and electrochemical synthesis [32]. In general it is found that β-FeSe 1-x Te x can be easily grown in a wide temperature range (250°C-600°C) on various substrates such as MgO, LaAlO 3 , SrTiO 3 , Si, SiO x /Si, GaAs, R-Al 2 O 3 , CaF2, and LSAT.…”
Section: C Fese 1-x Te X Thin Filmsmentioning
confidence: 99%
“…Thin films were synthesized with other approaches such as metal-organic chemical vapor deposition (MOCVD) [29,30], molecular beam epitaxy (MBE) [31], and electrochemical synthesis [32]. In general it is found that β-FeSe 1-x Te x can be easily grown in a wide temperature range (250°C-600°C) on various substrates such as MgO, LaAlO 3 , SrTiO 3 , Si, SiO x /Si, GaAs, R-Al 2 O 3 , CaF2, and LSAT.…”
Section: C Fese 1-x Te X Thin Filmsmentioning
confidence: 99%
“…FeSe 1− x Te x (FST) thin films can be prepared by many methods, such as pulsed laser deposition (PLD) [4, 4042], molecular beam epitaxy (MBE) [43, 44] and metalorganic chemical vapor deposition (MOCVD) [45]. Various substrates are used for growing epitaxial FST thin films, including SrTiO 3 , MgO, YAlO 3 , LaAlO 3 (LAO), Si, GaAs and r-Al 2 O 3 , despite some of them having a large lattice mismatch with FeSe 1− x Te x .…”
Section: Preparation Of Fese1−xtex Thin Filmsmentioning
confidence: 99%
“…• C, again for 12 h. There is very limited mention of superconducting films grown by other common techniques, such as molecular beam epitaxy [27,28], metalorganic chemical vapor deposition (MOCVD) [29] and sputtering [30]. Recently, very thick (thickness 100 µm) superconducting films of FeSe (T onset c = 8 K) were successfully deposited by electrochemical route [31].…”
Section: Synthesis Morphology and Crystalline Structurementioning
confidence: 99%