Superconducting tunnel junctions

Martin, D.; Verhoeve, P.

doi:10.1007/978-1-4614-7804-1_27

Cited by 6 publications

(4 citation statements)

References 42 publications

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“…The number of charge carriers generated in STJ structure is proportional to the energy of the absorbed photon, and ranges from several hundreds to a few thousand per eV [83] depending on the material used. As the QP relaxation is a fast process (∼10 -11 s) it makes STJs be used with high photoncounting rates.…”

Section: Superconducting Photon Pair Breaking Detectorsmentioning

confidence: 99%

Terahertz radiation detectors: the state-of-the-art

Sizov¹

2018

Semicond. Sci. Technol.

112

106

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The phenomena and recent progress in the evolution of the basic classes of the THz detectors that exist today are considered. Issues associated with the development and exploitation of THz radiation detectors in human activity applications are briefly addressed. The operation conditions of the THz detectors and their upper limit performance are discussed. Because of lack of space not all the important references will be mentioned. Where reasonable, mainly publications after 2011 are addressed.

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Section: Superconducting Photon Pair Breaking Detectorsmentioning

confidence: 99%

Terahertz radiation detectors: the state-of-the-art

Sizov¹

2018

Semicond. Sci. Technol.

112

106

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“…In order to enhance the photo absorption rate, anti reflection coating (ARC) could be used on the top of the device [28][29][30][31][32][33][34].…”

Section: Resultsmentioning

confidence: 99%

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Modak¹,

Kundu²,

Mukherjee³

2020

Semicond. Sci. Technol.

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The current paper reports the prospects of a multiple-graphene-layer (MGL) based vertically doped p ++ -n-n --n ++ avalanche photo-sensor in visible wavelength region (300 nm-800 nm). High carrier mobility, intrinsic optical and mechanical properties in graphene at room temperature, have made this material promising for various novel applications. The authors have used an indigenously developed and experimentally verified quantum-corrected field maximum classical drift-diffusion (QCFMCDD) mathematical model for studying the optical characteristics of MGL based p ++ -n-n --n ++ avalanche photo-diode sensor. The validity of the simulator is established through a comparative study between the experimental and analytical observations under similar operating (structural/electrical/thermal) conditions. Additionally, the superiority of the QCFMCDD model over the conventional classical drift-diffusion model is established through this comprehensive study. The analysis reveals that the opto-electrical properties of the device-under-test improve significantly as a result of the incorporation of MGL in the low doped active region. The authors have compared the results with those of a Si/4H-SiC super-lattice avalanche photo-sensor at 500 nm wavelength of incident radiation. It is observed that graphene outperforms its Si/4H-SiC counterpart in terms of photo-responsivity (0.820 A W −1 vs. 0.650 A W −1 ) and quantum efficiency (84% vs. 62%) for optical irradiation with visible laser source. The opto-electrical performance of the 3 × 3 array type graphene photo-sensor is further analyzed and compared with those of its single array counterpart. The photo-responsivity as well as quantum efficiency increases by at least 30% in the case of the 3 × 3 photo-sensor array. In comparison to available photo detectors, reported so far in published literature, the designed photo-sensor shows overall performance betterment in the visible wavelength region. To the best of authors' knowledge, this is the first report on MGL based 3 × 3 array type ultra fast highly sensitive visible avalanche diode photo-sensor.

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“…To observe the change in phase and amplitude, very sensitive measurements are made before charge carriers recombine in time periods of order, 10 −3 –10 −6 s. This technique has been used in detectors built into a 1000 pixel array [ 20 ]. MKIDs operate at temperatures ~100 mK [ 21 ] and have demonstrated position sensitivity with a noise equivalent power (NEP) of ~10 −17 W·Hz −1/2 [ 22 , 23 , 24 , 25 ]. Ongoing research activities are being performed to investigate the use of graphene as an MKID [ 26 , 27 ].…”

Section: Existing Technologiesmentioning

confidence: 99%

“…STJs have an effective band gap of order 1 meV, and operate at a low temperature, typically 300 mK, to ensure low dark noise. They have a time resolution of order microseconds and a typical resolution of order 1 eV for soft X-ray photons, and 0.1–0.2 eV for near-infrared and visible photons, with the Fano limit as the inherent energy resolution [ 22 , 23 ].…”

Section: Existing Technologiesmentioning

confidence: 99%

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

Williams

Alexander-Webber

Lapington

et al. 2016

Sensors

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Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies.

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Superconducting tunnel junctions

Cited by 6 publications

References 42 publications

Terahertz radiation detectors: the state-of-the-art

Terahertz radiation detectors: the state-of-the-art

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

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Superconducting tunnel junctions

Cited by 6 publications

References 42 publications

Terahertz radiation detectors: the state-of-the-art

Terahertz radiation detectors: the state-of-the-art

Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

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Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor