In this work we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift π . The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be non-destructively read by an electric current flowing across the junction. PACS numbers: 74.45.+c, 74.50.+r, 74.78.Fk, 85.25.Cp Josephson junctions containing normal (N) and ferromagnetic (F) materials in a weak link region are currently the subject of intense research. An interest in such structures is due to the possibility of their use as control elements of superconductor memory compatible with Single Flux Quantum (SFQ) logic. A number of implementations of Josephson control elements were proposed recently, among which the structures containing F layers in the weak link region are of greatest interest 1-3 . Various types of superconducting spin-valve structures including two or more ferromagnetic layers have been proposed [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] . The mutual orientations, parallel or antiparallel, of magnetizations of the layers determine critical currents and critical temperatures of the structures. Recently, it was proposed to apply the phenomenon of triplet superconductivity in spin-valve devices with noncollinear magnetization of the layers [19][20][21][22][23][24][25][26][27] . The problem of small characteristic voltage I C R N in these structures was solved by using an additional tunnel barrier connected through a thin superconducting spacer [28][29][30][31] . However, to control an operation of these devices, the application of magnetic fields or strong spin-polarized currents is necessary in order to switch the structure to a different state. Such control requires the use of additional external circuits resulting in restriction of possible memory density. Moreover, characteristic operational times of such devices are limited by relatively slow processes of the remagnetization of the ferromagnetic layers.In this work we propose a S-N/F-s-I-S control unit for a superconducting memory cell (Fig.1) based on the principles completely different as the suggested earlier. The considered structure consists of the two superconductive electrodes (S) and of the two weak link regions: the tunnel barrier (I) and the metallic (N/F) interlayer. The (N/F) part is formed by the longitudinally oriented normal (N) and ferromagnetic (F) layers. The weak link areas are separated by a thin super...