Superconducting Sn1–xInxTe Nanoplates

Sasaki, Satoshi; Ando, Yoichi

doi:10.1021/acs.cgd.5b00058

Cited by 12 publications

(19 citation statements)

References 34 publications

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“…However, due to the amorphous and insulating nature of the thin oxidized surface, the measured thermoelectric properties should be mainly contributed from the single crystalline In-SnTe core. The electrical conductivity σ determined from a standard four-terminal measurement is ~1.49 × 10 5 S m -1 at 300 K, which is close to the conductivity of In-doped SnTe polycrystalline samples (~2.0 -4.3 × 10 5 S m -1 ) 1 and nanoplates (~1.4 × 10 5 S m -1 ), 63 but is clearly lower than that of the undoped SnTe nanowires (6 -7 × 10 5 S m -1 ). 67 The σ increases when the sample is cooled down to around 100 K and then starts to decrease, rendering a metal-semiconductor transition (Figure 7b) which is in contrast to the pure metallic behavior observed in the undoped SnTe.…”

Section: -73supporting

confidence: 57%

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Losovyj

et al. 2017

Nanoscale

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The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere yields rapid oxidation of the surface within only one minute. Characterizations of electrical conductivity σ, thermopower S, and thermal conductivity κ were performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT than the undoped SnTe.2

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Section: -73supporting

confidence: 57%

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Losovyj

et al. 2017

Nanoscale

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“…High-quality single crystal In-SnTe nanostructures are grown under the V-S mechanism on the substrate using the very similar VTG method reported in Ref. [26]. Single crystal In-SnTe nanostructures with Au inclusion as an undesirable impurity are grown under the V-L-S mechanism with the GNPs on the substrate by our high-temperature VTG method.…”

Section: Growth Of In-snte Nanostructures By Vapor Transportmentioning

confidence: 99%

“…Nevertheless, superconducting In-SnTe has been attracting a lot of attention [9,[11][12][13][14][15] because superconducting doped topological materials are candidates for topological superconductors [16][17][18][19][20][21][22][23] that can harbor Majorana fermions [24,25]. Moreover, its robust superconductivity and simple sample handling [15,26] are a great advantage compared with other superconducting doped TIs [27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

“…These suggested that In-SnTe nanostructures can be made available with similar growth methods. In fact, several groups have recently investigated the properties of In-SnTe nanostructures grown by the vapor transport growth (VTG) methods with/without Ar gas flow [26,37]. Furthermore, robust bulk superconductivity of In-SnTe nanoplates/nanoflakes have been reported [26], which has opened the door to fabricate advanced superconducting devices using In-SnTe nanostructures.…”

Section: Introductionmentioning

confidence: 99%

“…[26] and at a relatively higher temperature than that of the VTG with Ar gas flow [31][32][33][34][35]37]. However, the actual dimensions of In-SnTe nanorods/nanowires grown without any catalyst materials on a Si/SiO 2 substrate in an evacuated quartz glass tube are often too thick to be a one-dimensional object with a single conduction channel.…”

Section: Introductionmentioning

confidence: 99%

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Unexpected Au Alloying in Tailoring In-Doped SnTe Nanostructures with Gold Nanoparticles

2017

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Materials with strong spin-orbit interaction and superconductivity are candidates for topological superconductors that may host Majorana fermions (MFs) at the edges/surfaces/vortex cores. Bulk-superconducting carrier-doped topological crystalline insulator, indium-doped tin telluride (In-SnTe) is one of the promising materials. Robust superconductivity of In-SnTe nanostructures has been demonstrated recently. Intriguingly, not only 3-dimensional (3D) nanostructures but also ultra-thin quasi-2D and quasi-1D systems can be grown by the vapor transport method. In particular, nanostructures with a controlled dimension will give us a chance to understand the dimensionality and the quantum confinement effects on the superconductivity of the In-SnTe and may help us work on braiding MFs in various dimensional systems for future topological quantum computation technology. With this in mind, we employed gold nanoparticles (GNPs) with well-identified sizes to tailor In-SnTe nanostructures grown by vapor transport. However, we could not see clear evidence that the presence of the GNPs is necessary or sufficient to control the size of the nanostructures. Nevertheless, it should be noted that a weak correlation between the diameter of GNPs and the dimensions of the smallest nanostructures has been found so far. To our surprise, the ones grown under the vapor-liquid-solid mechanism, with the use of the GNPs, contained gold that is widely and inhomogeneously distributed over the whole body.

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Low-Dimensional Topological Crystalline Insulators

Wang

Feng

et al. 2015

Small

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Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.

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Superconducting Sn_1–xIn_xTe Nanoplates

Cited by 12 publications

References 34 publications

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Unexpected Au Alloying in Tailoring In-Doped SnTe Nanostructures with Gold Nanoparticles

Low-Dimensional Topological Crystalline Insulators

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