Superconducting properties, electrical resistivities, and structure of NbN thin films

Shy, Yih-Hsun; Toth, L. E.; Somasundaram, R.

doi:10.1063/1.1662193

Cited by 107 publications

(45 citation statements)

References 25 publications

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“…Vanadium nitride (VN) has extreme hardness, high-temperature stability, and electrical conductivity that make this material suitable for many uses. The traditional applications of these materials range from cutting tools and structural materials [1,2] to magnetic and electric components [3], and superconducting devices [4][5][6]. Moreover, there is increasing interest on vanadium nitride as an important industrial catalyst known for its selectivity and stability [7,8].…”

Section: Introductionmentioning

confidence: 99%

Carbothermal synthesis of vanadium nitride: Kinetics and mechanism

Ortega

Roldán

Real

2006

Int J of Chemical Kinetics

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Constant rate thermal analysis (CRTA) has been used for the first time to study the kinetics of the carbothermal reduction of V 2 O 5 in nitrogen to obtain vanadium nitride. It is noteworthy to point out that CRTA method allows both a good control of pressure in the sample surroundings and the use of reaction rates low enough to keep temperatures gradients at a negligible level to avoid any heat or mass transfer phenomena. This method allows one to control the texture and the structure of many materials through kinetic control of the thermal treatment of the precursors. The precise control of the external parameters of the reaction shows that CRTA is an attractive method for kinetic studies and leads to more reliable kinetic data. It has been shown that the carbothermal synthesis of vanadium nitride is best described by a three-dimensional diffusion kinetic model (the Jander equation) with an activation energy which falls in the range of 520-540 kJ/mol. C

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Section: Introductionmentioning

confidence: 99%

Carbothermal synthesis of vanadium nitride: Kinetics and mechanism

Ortega

Roldán

Real

2006

Int J of Chemical Kinetics

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“…For example, superconductor-insulator-superconductor mixers are usually fabricated on substrates with low dielectric constants and single flux quantum circuits are prepared on Si wafers. [13][14][15] However, because the superconducting properties of NbN films are dependent on the crystal structures of the film, 16,17 it is difficult to fabricate high-quality NbN tunnel junctions on substrates other than MgO. Despite several attempts to develop NbN tunnel junctions using Si substrates, 18,19 to date, there have been no reports of junctions with a high quality similar to that of epitaxial NbN junctions fabricated on MgO substrates.…”

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confidence: 98%

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

et al. 2016

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We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

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“…Owing to their useful properties and their growing importance in industry, metal nitrides have been of great interest to the broad scientific community for decades [1,2]. Among these materials, CrN is one of the most important compounds, which has many promising applications in a wide range of areas, for example, it can be used in the field of wear and corrosion apparatus, based on its properties of high hardness and good corrosion resistance [3].…”

Section: Introductionmentioning

confidence: 99%