Superconducting Dome in a Gate-Tuned Band Insulator

Ye, J. T.; Zhang, Yijin; Akashi, Ryosuke; Bahramy, M. S.; Arita, Ryotaro; Iwasa, Yoshihiro

doi:10.1126/science.1228006

Cited by 1,000 publications

(1,167 citation statements)

References 46 publications

(46 reference statements)

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“…Gate-induced superconductivity at the surface of semiconducting TMDs has been first demonstrated in recent pioneering work on MoS 2 fieldeffect transistors 25 (FETs) with liquid gates 26 27 28 . These experiments have been performed on thick exfoliated layers, behaving in all regards as bulk, and have led to the observation of T C values up to 12 K upon accumulation of electron surface densities close to n ~ 10 14 cm -2 .…”

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confidence: 99%

Gate-induced superconductivity in atomically thin MoS2 crystals

et al. 2016

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When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the evolution of gate-induced The ability to produce few-atom-thick two-dimensional (2D) materials of excellent quality 1 2 -such as graphene 3 4 5 , semiconducting transition metal dichalcogenides (TMDs) 6 7 , and phosporene 8 -is an impressive breakthrough in condensed matter physics and nanoelectronics. Upon adding an individual monolayer, the electronic properties of these 2D materials change drastically, so that multilayers of different thickness truly represent distinct

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confidence: 99%

Gate-induced superconductivity in atomically thin MoS2 crystals

et al. 2016

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“…However a detailed physical picture and quantitative framework for understanding how solvent affects junction level alignment remains elusive despite clear evidence [20]: new theory and models are required to understand and better control solvent effects on junction transport properties. Given the significant recent interest in solvent-base gating of correlated oxides [27], graphene [28], and transition metal dichacogenides [29], such a theory will have general implications.In this Letter, we explain the effect of solvent on molecular device transport properties in a manner analogous to a chemical electrostatic gate controllably altering the local potential of the junction. We demonstrate how the electrode surface can act as a template to order the adsorbate molecules near the junction, resulting in large, ordered induced dipoles and a sizable, coherent shift of the average junction electrostatic potential, outweighing bulk effects associated with thermal fluctuations at room temperature and the low intrinsic dipole moment of the unbound solvent molecules.…”

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confidence: 99%

Adsorption-Induced Solvent-Based Electrostatic Gating of Charge Transport through Molecular Junctions

et al. 2015

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Recent experiments have shown that transport properties of molecular-scale devices can be reversibly altered by the surrounding solvent. Here, we use a combination of first-principles calculations and experiment to explain this change in transport properties through a shift in the local electrostatic potential at the junction caused by nearby conducting and solvent molecules chemically bound to the electrodes. This effect is found to alter the conductance of 4,4'-bipyridine-gold junctions by more than 50%. Moreover, we develop a general electrostatic model that quantitatively predicts the relationship between conductance and the binding energies and dipoles of the solvent and conducting molecules. Our work shows that solvent-induced effects are a viable route for controlling charge and energy transport at molecular-scale interfaces.PACS numbers: 31.15. A-,73.30.+y,73.63.-b,85.65.+h Single-molecule junctions, individual molecules contacted with macroscopic electrodes, provide unique insight into the nanoscale physics of charge, spin, and energy transport [1][2][3][4]. To date, the most robust and reproducible approach to assemble single-molecule junctions is the scanning tunneling microscope-based break junction (STM-BJ) technique [5,6], allowing statistically significant measurements of molecular junction conductance [5-9], thermopower [10][11][12], mechanical properties [13][14][15], and binding mechanisms [15]. Previouslydeveloped theoretical approaches have led to quantitative agreement with experiment for molecular junctions, given a good approximation to the junction geometry and a good estimate of the differences in energy ∆E between the junction Fermi energy, E F and the orbital energy of the frontier orbital, either the highest occupied or lowest unoccupied molecular orbital (HOMO or LUMO, respectively) [16]. Theoretical works focusing on this level alignment [17,18] have led to increased understanding and control of molecular junction conductance and thermopower in terms of junction level alignment, with significant impact on experiments [10][11][12]19].Commonly, these experiments take place at room temperature in a non-conductive solvent [5][6][7][8], which has recently been shown to influence both junction formation probability and, in some cases, to alter the conductance [20]. Despite its practical importance, the impact of these solvents on conductance has not yet been fully understood or explained by theory, in part due to the large computation cost [21], and, therefore, continues to be elusive to control. Previous theoretical works have focused on the effect of solvent on the average [22,23] and dynamical [24] molecular junction geometries, and how they affect level alignment and modify the conductance [25]. Another focus has been the coupling of transmission channels due to intermolecular hopping between conducting molecules [26], in the case solvent would influence the formation of multiple simultaneous junctions. However a detailed physical picture and quantitative framework for understandin...

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Section: Superconductivitymentioning

confidence: 99%

“…[16,17] That this field-induced superconductivity is conventional cannot be ruled out. On the other hand, superconductivity that appears at 86 mK when the quantum paraelectric insulator SrTiO3 is doped with as few as 5.5x10 17 electrons/cm 3 (corresponding to a two-dimensional carrier density of 6.7x10 11 /cm 2 ) is likely not to be conventional. [18,19] In this very dilute limit, the degeneracy temperature of mobile electrons is only ~ 13 K, which is an order of magnitude lower than the lattice Debye temperature, a condition untenable within the theoretical framework of phonon-mediated superconductivity.…”

Section: Superconductivitymentioning

confidence: 99%

SCES2013 Summary: Experiment

Thompson

2014

Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013)

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During SCES2013, a broad range of materials and phenomena were discussed. Importantly, experimental reports emphasized how much progress is being made but also that much remains to be learned from the fascinating challenges posed by strongly correlated electron systems. This brief summary of experimental activities highlights a few of the many recent developments in superconductivity, couplings, emerging topics and spectroscopies.

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Superconducting Dome in a Gate-Tuned Band Insulator

Cited by 1,000 publications

References 46 publications

Gate-induced superconductivity in atomically thin MoS2 crystals

Gate-induced superconductivity in atomically thin MoS2 crystals

Adsorption-Induced Solvent-Based Electrostatic Gating of Charge Transport through Molecular Junctions

SCES2013 Summary: Experiment

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