Super-lateral-growth regime analysis in long-pulse-duration excimer-laser crystallization of a-Si films on SiO 2

Fogarassy, É.; Unamuno, S. de; Prevot, B.; Boher, Pierre; Stehle, M.; Pribat, Didier

doi:10.1007/s003390050952

Cited by 10 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In contrast, Foga-rassy et al, who used long pulses of 200 ns, did observe signs of XC. 30,31 Turning back to our results, it is well known that, at energy densities slightly below the threshold for complete melting, micrometer-wide, single-crystalline grains can be obtained. This is indeed what we observe ͓see Fig.…”

Section: Figures 3 and 4 Show A Selection Of Tem Images And Thesupporting

confidence: 63%

Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Voogt

Ishihara

Tichelaar

2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Section: Figures 3 and 4 Show A Selection Of Tem Images And Thesupporting

confidence: 63%

Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Voogt

Ishihara

Tichelaar

2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Wang et al [6] have also fabricated high-quality nc-Si films by KrF excimer laser annealing of α-Si:H/α-SiN x :H superlattices. Fogarassy et al [7] have investigated, both experimentally and numerically, the excimer laser induced crystallization of α-Si films on SiO 2 substrate. More recently, Watanabe et al [8] obtained nanocrystalline Si films by multistep laser annealing using organosilicon nanocluster films as a precursor.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Peng

et al. 2004

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (α-Si) films on SiO 2 -coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the α-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the α-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the α-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the α-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the α-Si films.

show abstract

“…In Fig.5, the average grain sizes (as deduced from SEM) in 80 nm-thick Si films after singleshot irradiations (in air) are plotted as a function of the laser energy density [16]. The amorphous-to-polycrystalline transition, which occurs at the surface melting threshold, is found to be close to 300-350 mJ/cm 2 for T s = 27°C, and in the 200-250 mJ/cm 2 range for Ts = 400°C.…”

Section: A) Polysilicon Film Characterizationmentioning

confidence: 99%

Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

Fogarassy¹,

Prevot²,

Unamuno³

et al. 2001

MRS Proc.

Self Cite

View full text Add to dashboard Cite

In this work, was investigated both numerically and experimentally, the excimer laser processing of a-Si films deposited on SiO 2 -coated glass substrates, using the very large area (~ 20 cm2) and long pulse duration (200 ns) excimer source from SOPRA Company. Experiments were carried out in air or in neutral atmosphere, using both the single-and multishot mode. From the microstructural analysis of the laser irradiated area the formation of a large-grained material through the so-called SLG regime was evidenced. In addition, the application of a multi-shot process was demonstrated to be very efficient to prepare uniform polysilicon layers with enlarged grain sizes (up to 1.5 µm after 20 shots). Finally, poly-Si TFTs prepared in the optimized conditions (multi-shot, neutral ambience) exibited field effect mobilities up to 235 cm 2 /V.s (for N-type) and 84 cm 2 /V.s (for P-type), with fairly uniform device characteristics over large area and excellent stability under electrical stress.

show abstract

Super-lateral-growth regime analysis in long-pulse-duration excimer-laser crystallization of a-Si films on SiO 2

Cited by 10 publications

References 0 publications

Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

Contact Info

Product

Resources

About