Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

Ahmed, Imtiaz; Rawat, Udit; Chen, Jr-Tai; Weinstein, Dana

doi:10.1109/tuffc.2023.3241775

Cited by 8 publications

(4 citation statements)

References 54 publications

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“…Recent development in 2D piezoelectric materials clearly demonstrate that 3R‐MoS 2 is capable of maintaining its piezoelectricity for the thickness of a few tens of nanometers. [ 36,68 ] Compared to the resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups since 2000 [ 2,4,43–65 ] as shown in Figure , the 3R‐MoS 2 SMR developed in this study has the highest fundamental resonant frequency and the highest electromechanical coupling coefficient to the best of our knowledge. These results suggest that utilization of 2D 3R‐MoS 2 flakes for FBAR devices could be a feasible way‐out strategy to achieve higher operation frequencies.…”

Section: Resultsmentioning

confidence: 62%

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Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Yang

Sun

Cai

et al. 2023

Adv Funct Materials

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Conventional bulk and thin piezoelectric materials based film bulk acoustic resonators (FBARs) are facing an insurmountable challenge for millimetric frequency applications due to the poor piezoelectric properties of the materials when their thickness reaches the sub-micron regime. Novel FBARs for ultra-high working frequencies are in urgent demand to meet the requirements of the fast-growing 5/6G telecommunication techniques. Recent advances in 2D piezoelectric nanomaterials create an opportunity in this perspective. Here, the first FBAR chip based on 2D 3R-MoS 2 ultrathin piezoelectric flakes with a solidly mounted resonator (SMR) architecture is reported. The typical resonant frequency for an SMR device based on ≈200 nm 3R-MoS 2 flake reaches over 25 GHz with high reproducibility. Theoretical and finite element analysis suggest that the observed resonance is of longitudinal acoustic modes. This study demonstrates for the first time that the access to 2D piezoelectric nanomaterials makes high performance piezoelectric devices feasible for various promising applications including high-speed telecommunication, acousto-optic, and sensor fields,etc.

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Section: Resultsmentioning

confidence: 62%

“…Resonance frequencies and electromechanical coupling coefficients of several thin film resonators reported by different groups and this work. [ 2,4,43–65 ] …”

Section: Resultsmentioning

confidence: 99%

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Yang

Sun

Cai

et al. 2023

Adv Funct Materials

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“…In practical applications, typically, modes other than basic Rayleigh modes are used, namely, Sezawa, pseudo-bulk, or bulk modes. In terms of applied designs, interdigital transducers [3,4] and layered resonators [5] are used to generate acoustic waves. Another dimension of complexity and opportunities stems from the fact that nitride layers are deposited on different types of heterostructure substrates, which creates opportunities for the additional modification of transducer characteristics by modifying the topology of the entire heterostructure, such as by adding additional grooves to increase their sensitivity [6] or by using a multilayer structure that supports more propagation modes compared to bulk materials.…”

Section: Introductionmentioning

confidence: 99%

Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors

Paszkiewicz,

Dziedzic

2024

Electronics

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Nitrides are the leading semiconductor material used for the fabrication of high electron mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their high mechanical stiffness, expand their versatile applications into the fabrication of piezoelectric devices. Today, due to advances in device technology that result in a reduction in the size of individual transistor elements and due to increased structural complexity (e.g., multi-gate transistors), the integration of piezoelectric materials into HEMTs leads to an interesting occurrence, namely acoustic emission from the transistor gate due to piezoelectric effects. This could affect the device’s performance, reliability, and durability. However, this phenomenon has not yet been comprehensively described. This paper aims to examine this overlooked aspect of AlGaN/GaN HEMT operation, that is, the acoustic emission from the gate region of the device induced by piezoelectric effects. For this purpose, dedicated test structures were designed, consisting of two narrow 1.7 μm-wide metallization strips placed at distances ranging from 5 μm to 200 μm fabricated in AlGaN/GaN heterostructures to simulate and examine the gate behavior of the HEMT transistor. For comparison, the test device structures were also fabricated on sapphire, which is not a piezoelectric material. Measurements of acoustic and electrical interactions in the microwave range were carried out using the “on wafer” method with Picoprobe’s signal–ground–signal (SGS)-type microwave probes. The dependence of reflectance |S11| and transmittance |S21| vs. frequency was investigated, and the coupling capacitance was determined. An equivalent circuit model of the test structure was developed, and finite element method simulation was performed to study the distribution of the acoustic wave in the nitride layers and substrate for different frequencies using Comsol Multiphysics software. At frequencies up to 2–3 GHz, the formation of volume waves and a surface wave, capable of propagating over long distances (in the order of tens of micrometers) was observed. At higher frequencies, the resulting distribution of displacements as a result of numerous reflections and interferences was more complicated. However, there was always the possibility of a surface wave occurrence, even at large distances from the excitation source. At small gate distances, electrical interactions dominate. Above 100 µm, electrical interactions are comparable to acoustic ones. With further increases in distance, weakly attenuated surface waves will dominate.

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“…FIG.3. Akhiezer f Q limit of SiC and GaN materials indicated in red line and blue line, respectively, and some of the reported GaN f Q values in the literature[8,10,[31][32][33][34][35][36]. The references are placed in the main text.…”

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confidence: 99%

Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

Bicer

Valle

Brown

et al. 2022

Applied Physics Letters

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Strong transverse confinement of high-frequency sound and low-loss routing in on-chip waveguides will bring new degrees of freedom to manipulate GHz frequency acoustic waves, analogous to the change brought forth by silicon integrated photonics to the routing and manipulation of light on a chip. Here, we demonstrate that high frequency (>3 GHz) sound can be efficiently guided in μm-scale gallium nitride (GaN) waveguides and ring resonators by exploiting the strong velocity contrast available in the GaN on silicon carbide (SiC) platform. Given the established use of GaN devices in RF amplifiers, our work opens up the possibility of building RF devices with tight integration between the active and passive components on the same die.

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Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

Cited by 8 publications

References 54 publications

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors

Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

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Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

Cited by 8 publications

References 54 publications

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS2 Atomic Flakes

Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors

Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices

Contact Info

Product

Resources

About

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes

Solidly Mounted Resonators with Ultra‐High Operating Frequencies Based on 3R‐MoS₂ Atomic Flakes