Super High Frequency Aluminum Nitride Two-Dimensional-Mode Resonators With $k_{t}^{2}$ Exceeding 4.9%

Cassella, Cristian; Oliva, Nicoló; Soon, Jeffrey Bo Woon; Merugu, Srinivas; Singh, Navab; Piazza, Gianluca

doi:10.1109/lmwc.2016.2646924

Cited by 25 publications

(11 citation statements)

References 7 publications

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“…In this Appendix, we give a brief discussion of the design and modeling of the piezoelectric resonator. Our current device design in GaAs follows the simple geometry of interdigitated electrodes on a rectangular suspended plate [41,[78][79][80]. The examples in the main text assumes a 220 nm GaAs film in the {100} crystal orientation loaded with 50 nm-thick aluminum electrodes with width and spacing of 475 nm which piezoelectrically drive the mechanical mode.…”

Section: Discussionmentioning

confidence: 99%

“…Stronger piezoelectric materials such as AlN and LiNbO 3 have been used as piezo-optomechanical platforms in the context of optical modulation [46,76,77] and microwaveto-optical conversion [32,34,48]. In purely piezoelectric resonators, the effective piezoelectric coupling coefficient k 2 can reach 3 % to 7 % in AlN [78] and as high as 30 % in LiNbO 3 [41,79,80]. Since k 2 is reduced when electrodes are placed solely on the top surface (as is the case for the geometries we consider), conservative numbers of k 2 = 1 % and 10 % are chosen for our examples, respectively.…”

Section: B Piezo-optomechanical Transducer In Aln and Linbo3mentioning

confidence: 99%

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Microwave-to-Optical Transduction Using a Mechanical Supermode for Coupling Piezoelectric and Optomechanical Resonators

Zeuthen

Balram

et al. 2020

Phys. Rev. Applied

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The successes of superconducting quantum circuits at local manipulation of quantum information and photonics technology at long-distance transmission of the same have spurred interest in the development of quantum transducers for efficient, low-noise, and bidirectional frequency conversion of photons between the microwave and optical domains. We propose to realize such functionality through the coupling of electrical, piezoelectric, and optomechanical resonators. The coupling of the mechanical subsystems enables formation of a resonant mechanical supermode that provides a mechanically-mediated, efficient single interface to both the microwave and optical domains. The conversion process is analyzed by applying an equivalent circuit model that relates device-level parameters to overall figures of merit for conversion efficiency η and added noise N . These can be further enhanced by proper impedance matching of the transducer to an input microwave transmission line. The performance of potential transducers is assessed through finite-element simulations, with a focus on geometries in GaAs, followed by considerations of the AlN, LiNbO3, and AlN-on-Si platforms. We present strategies for maximizing η and minimizing N , and find that simultaneously achieving η > 50 % and N < 0.5 should be possible with current technology. Our comprehensive analysis of the full transduction chain enables us to outline a development path for the realization of high-performance quantum transducers that will constitute a new resource for quantum information science.

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Section: Discussionmentioning

confidence: 99%

Section: B Piezo-optomechanical Transducer In Aln and Linbo3mentioning

confidence: 99%

Microwave-to-Optical Transduction Using a Mechanical Supermode for Coupling Piezoelectric and Optomechanical Resonators

Zeuthen

Balram

et al. 2020

Phys. Rev. Applied

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“…To enable multi-band transceivers, there is an urgent need for an acoustic resonator technology that simultaneously provides extensive on-chip frequency tailorability while sustaining large kt 2 and Q. Benefiting from lithographical frequency scalability AlN Lamb-wave resonators are potential candidates for realization of integrated multi-band RF filters [1][2][3]. However, to materialize such potential Lamb-wave resonators must overcome their shortcomings in major resonator performance metrics, i.e.…”

Section: Introductionmentioning

confidence: 99%

HIGH Kt2∙Q LAMB-WAVE SCALN-ON-SILICON UHF AND SHF RESONATORS

Ghatge¹,

Felmetsger²,

Tabrizian³

2018

2018 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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This paper reports, for the first time, on waveguide-based resonators implemented in scandium-doped aluminum nitride-onsilicon (ScAlN-on-Si) stack to simultaneously benefit from large piezoelectric constants of ScAlN and low acoustic dissipation in single crystal silicon. 1m-thick ScAlN film with Sc content of 7% is reactively sputtered on silicon substrates using ac-powered dualtarget S-gun magnetron with Al targets containing embedded pure Sc pellets. A Cl2/H2 based low-power plasma etching recipe is developed to pattern resonators with smooth vertical sidewalls. Inand out-of-plane waveguide-based resonator prototypes with large electromechanical coupling coefficient (kt 2 ) and high quality-factor (Q) are implemented over 80 MHz -3.5 GHz demonstrating kt 2 of 0.7%-2.9% and Q of 2000-6400. Specifically, a high 0 × of 4.3 × 10 12 is measured for a resonator at 3.5 GHz, and a high 2 × of 51 is measured at 108 MHz. The large 2 × of ScAlNon-Si waveguide-based resonators along with lithographical frequency tailorability demonstrate their potential for realization of highly integrated front-end filters for multi-band 5G systems.

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“…Therefore, in recent years, many groups have researched novel AlN-based device technologies, simultaneously enabling high-kt 2 and a lithographic frequency tunability [13][14][15][16][17][18][19][20][21] . In particular, Cross-Sectional-Lamé-Mode resonators (CLMRs) 13,22 and Two-Dimensional-Mode-Resonators (2DMRs) 16 were recently demonstrated. CLMRs excite a combination of vertical (S1) and lateral (S0) longitudinal motions 23 , in AlN plates, through a coherent combination of the d31 and d33 piezoelectric coefficients.…”

mentioning

confidence: 99%

“…This feature renders any step of mass-loading or trimming not easily controllable and, consequently, hardly usable in a large-scale production. Therefore, in recent years, many groups have researched novel AlN-based device technologies, simultaneously enabling high-kt 2 and a lithographic frequency tunability [13][14][15][16][17][18][19][20][21] . In particular, Cross-Sectional-Lamé-Mode resonators (CLMRs) 13,22 and Two-Dimensional-Mode-Resonators (2DMRs) 16 were recently demonstrated.…”

mentioning

confidence: 99%

Aluminum nitride two-dimensional-resonant-rods

Zhao

Colombo

Cassella

2020

Applied Physics Letters

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In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential components of 1G-to-4G radios. These devices rely on the high electromechanical coupling coefficient (kt 2~7 %), attained by Aluminum Nitride (AlN) Film-Bulk-Acoustic-Resonators (FBARs), to achieve a wideband and low-loss frequency response. As the resonance frequency of FBARs is set by their thickness, the integration of multiple FBARs, to form filters, can only be attained through the adoption of frequency tuning fabrication steps, such as mass loading or trimming. However, as the ability to reliably control these steps significantly decays for thinner FBARs, manufacturing FBARs-based filters, addressing the needs of emerging IoT and 5G high-frequency applications, is becoming more and more challenging.Consequently, there is a quest for new acoustic resonant components, simultaneously exhibiting highkt 2 and a lithographic frequency tunability. In this work, a novel class of AlN resonators is presented.These radio-frequency devices, labelled as Two-Dimensional-Resonant-Rods (2DRRs), exploit, for the first time, the unconventional acoustic behavior exhibited by a forest of locally resonant rods, built in the body of a profiled AlN layer that is sandwiched between a bottom un-patterned metal plate and a top metallic grating. 2DRRs exhibit unexplored modal features that make them able to achieve highkt 2 , a significant lithographic frequency tunability and a relaxed lithographic resolution, while relying on an optimal AlN crystalline orientation. The operation of 2DRRs is discussed, in this work, by means of analytical and finite-element (FE) investigations. The measured performance of the first fabricated 2DRR, showing a kt 2 in excess of 7.4%, are also reported.In the last decades, acoustic resonators 1-4 and filters have represented key components for several radio-frequency (RF) applications and systems. For instance, their superior performance, when compared to conventional electromagnetic counterparts, have made them essential to form frequency selective passive components in miniaturized RF platforms. Aluminum Nitride (AlN) Film-Bulk-Acoustic-Resonators (FBARs) 2,5,6 have been extensively used to form filters in commercial RF frontends. In fact, thanks to their ability to attain large electromechanical coupling coefficient (kt 2~7 %), while being manufacturable through conventional semiconductor fabrication processes, FBARs have enabled commercial ultra-and super-high-frequency (U/SHF) acoustic filters, exhibiting fractional bandwidths and performance exceeding those required by 4G communication systems. However, despite their high-kt 2 , the resonance frequency (fres) of FBARs is set by the thickness of the different forming layers 7,8 . This feature renders the manufacture of FBARs, having different fres-values, only attainable through post-processing steps, like trimming and mass loading, thus leading to a much higher fabrication complexity. Such complexity becomes even more significant when FBAR-based filters,

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Super High Frequency Aluminum Nitride Two-Dimensional-Mode Resonators With $k_{t}^{2}$ Exceeding 4.9%

Cited by 25 publications

References 7 publications

Microwave-to-Optical Transduction Using a Mechanical Supermode for Coupling Piezoelectric and Optomechanical Resonators

Microwave-to-Optical Transduction Using a Mechanical Supermode for Coupling Piezoelectric and Optomechanical Resonators

HIGH Kt2∙Q LAMB-WAVE SCALN-ON-SILICON UHF AND SHF RESONATORS

Aluminum nitride two-dimensional-resonant-rods

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