Super-hard “Tanghulu”: cubic BP microwire covered with amorphous SiO2 balls

Liang, Yali; Lu, Xuefang; Ding, Ying; Zheng, Wei

doi:10.1016/j.heliyon.2021.e08300

Cited by 3 publications

(3 citation statements)

References 29 publications

(32 reference statements)

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“…This commonality has prompted more research on this material in recent years, − but compared with c-BN and c-BAs, studies on the physical properties of c-BP are still lagging behind. For a deeper understanding of this material, in our previous work, micron-scale isotopic pure c-BP single crystals and micron wires were synthesized with detailed studies carried out on their properties such as the growth mechanism, lattice vibration, hardness, piezoelectricity, etc. − However, the difficulty of growing large-size high-quality single crystals hinders a further characterization of their physical properties at that stage.…”

Section: Introductionmentioning

confidence: 99%

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Zhu

Cheng

et al. 2023

J. Phys. Chem. C

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Cubic boride crystals with pure boron isotopes have attracted great attention in recent years. Here, high-quality cubic boron phosphide single crystals with isotopic 10 B and a maximum width reaching 1.5 mm are grown via the high-temperature molten salt method. An interesting phenomenon that there are many discrete sharp lines in the low-temperature (4−80 K) photoluminescence spectra is observed. Besides, as temperature increases, the luminescence intensity of these sharp lines shows a nonmonotonic decay with two different trends exhibited. Based on analyses, the sharp-line emission originates from phonon-assisted donor−acceptor pair radiative recombination. The nonmonotonic decay is affected by the number of assisting phonons and the degree of thermal ionization under the effect of temperature, and the different decay trends are attributed to the effect of thermal ionization dependent on the distance between the donor and acceptor. Results obtained in this research are expected to enrich the knowledge concerning cubic boride crystals in the aspect of physical properties.

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Section: Introductionmentioning

confidence: 99%

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Zhu

Cheng

et al. 2023

J. Phys. Chem. C

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“…Most research conducted currently focuses on the natural abundance of the boron ( nat B) element, which consists of 19.9% 10 B and 80.1% 11 B. , Differences in the mass of the isotope nucleus can cause certain differences in physical and chemical properties between elements. , The capture cross section of the 10 B thermal neutron is about 3840 bar, which makes it regarded as a promising candidate for neutron detection. , Besides, according to experimental and theoretical studies, the thermal conductivity of semiconductors composed of pure isotope B, such as cubic BP, cubic BAs, and cubic BN, is significantly higher than that of the semiconductor consisting of mixed isotopes. − Therefore, the study of the properties and applications of pure isotope B is of great significance.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

Lin

et al. 2022

ACS Nano

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An urgent demand for electronic and optoelectronic devices able to work in extreme environments promotes a series of research studies on semiconductor materials. Cubic boron phosphide (BP) as a semiconductor material with excellent characteristics shows great application potential. However, since the synthesis conditions required are difficult to achieve and the growth mechanism of BP is still unclear, there are few reports on the basic properties of BP and pure isotope BP, resulting in a narrow understanding of their special physical properties. Here, we successfully obtained highly pure isotopic 10 BP crystals by a vapor−liquid−solid (VLS) method unconventionally designed, which successfully overcomes the thermodynamic conflict between the high melting point of the boron element and low sublimation temperature of the phosphorus element. The 10 BP achieved owns an aspect ratio as high as 10 4 and a hardness up to 41 GPa. Besides, as an indirect bandgap semiconductor, it has ultrawide red emission spectra, a p-type conductivity with extremely low resistivity, and excellent photoelectronic and piezoelectric characteristics. Furthermore, compared with other superhard semiconductors like cubic BN and diamond, 10 BP has an obvious advantage of lower growth temperature (1200 °C). All these characteristics confirm the prospects owned by 10 BP in its applications to the field of high-conductivity, optoelectronic, strain-sensing, and superhard semiconductors.

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“…Cubic boron phosphide (c-BP) is a typical III–V zinc-blende semiconductor with strong covalent bonds, which is composed of two light elements. , The characteristics such as large band gap (2.0 eV), large neutron absorption cross-section (3840 barns), high thermal stability (a stable composition up to about 1130 °C), excellent mechanical properties (hardness up to 40 GPa), high thermal conductivity (BP, 460 W m –1 K –1 at 300 K; 11 BP, 590 W m –1 K –1 ), , high mobility (5400 cm 2 /(V·s) at 300 K), and chemical inertness have made BP possess potential applications in photoelectronic fields, even in an extreme environment. So far, BP has exhibited great performance in cases of wide-gap window solar cells, wide-gap emitter transistors, solid-state medium detection, emitter transistors, Schottky diodes, heat diffusers, three-dimensional (3D) integrated circuits, and infrared transparent coating materials .…”

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confidence: 99%

Ultralarge Elastic Deformation (180° Fold) of Cubic-^natBP Microwires for Wearable Flexible Strain Sensors

Lin

Zhu

et al. 2023

ACS Materials Lett.

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Flexible strain sensors that can convert mechanical irritation from an external environment into electrical signals are key components in wearable devices. Here, using the principle of a B–Ni phase diagram, a pure-phase cubic natural boron phosphide (c-natBP) single-crystal microwire is obtained, which possesses ultralarge elastic deformation realized with the bending degree up to 180°. Based on the natBP microwire, a flexible strain sensor is prepared with an obvious quasi-linear response to external strain exhibited, which can be attributed to the Schottky barrier height (SBH) formed at the metal–crystal contact changing with the strain. Such strain-induced change results from lattice deformation, reconstructing the electronic structure and electron affinity. Furthermore, the effective and fast response of this flexible strain sensor in the practical applications of bicycle speed detection as well as finger and wrist bending detection demonstrates the potential of c-natBP microwire flexible strain sensors in wearable electronics, man–machine systems, and soft robotics.

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Super-hard “Tanghulu”: cubic BP microwire covered with amorphous SiO2 balls

Cited by 3 publications

References 29 publications

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

Ultralarge Elastic Deformation (180° Fold) of Cubic-^natBP Microwires for Wearable Flexible Strain Sensors

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Super-hard “Tanghulu”: cubic BP microwire covered with amorphous SiO2 balls

Cited by 3 publications

References 29 publications

Ultra-sharp-Line Emission in Isotopic c-10BP

Ultra-sharp-Line Emission in Isotopic c-10BP

Ultra-Hard (41 GPa) Isotopic Pure 10BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

Ultralarge Elastic Deformation (180° Fold) of Cubic-natBP Microwires for Wearable Flexible Strain Sensors

Contact Info

Product

Resources

About

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-sharp-Line Emission in Isotopic c-¹⁰BP

Ultra-Hard (41 GPa) Isotopic Pure ¹⁰BP Semiconductor Microwires for Flexible Photodetection and Pressure Sensing

Ultralarge Elastic Deformation (180° Fold) of Cubic-^natBP Microwires for Wearable Flexible Strain Sensors