Suns-Voc Characteristics of Silicon Solar Cell: Experimental and Simulation Study

Abstract

The efficiency of solar cells depends on the quality of passivation of surface. The quality of passivation is analyzed as a function of the dependence of the open circuit voltage on the light intensity. Therefore, in this article, the dependence of the photoelectric parameters of the silicon-based solar cell on the light intensity was studied. According to the obtained results, it was found that the variation of the short-circuit current through light intensity is equal to 25.6 mA/suns•cm 2 . The agreement of the results obtained in research and modeling with the results of experiments proves the validity and correctness of the model. In this paper, the Sentaurus TCAD model of a silicon-based solar cell is experimentally verified. So, the dependence of the open circuit voltage of the silicon-based solar cell on the light intensity was studied through modeling and experiment. The functional dependence of the open circuit voltage obtained in the modeling satisfied the experiment. Therefore, the model of the solar cell created in Sentaurus TCAD is suitable for research. So, we can use model created in Sentaurus TCAD in our further researches. In addition, the fill factor of solar cell increased with increasing intensity. This proves that the resistive properties of the solar cell are improving.