Sulphurization temperature effect on suppressing CuS phase in kesterite CZTS films grown by electrodeposition method

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…Ferdous et al 13 Raman et al used the architecture Al/CdS/Sb 2 Se 3 /Mo and the final PCE they obtained is 28.25%, V oc is 0.86 V, J sc is 37.90 mA/cm 2 , and FF is 86.84% 14 . Daoudi et al have reported PCE of 28.08%, FF of 88%, V oc of 1.07 V, and J sc of 29.53 mA/cm 2 15 . With the structure CZTS/WS2/In2Se3, Kumar Dakua P et al have obtained a PCE of 22.96% 16 .…”

“…14 Daoudi et al have reported PCE of 28.08%, FF of 88%, V oc of 1.07 V, and J sc of 29.53 mA/cm 2 . 15 With the structure CZTS/WS2/In2Se3, Kumar Dakua P et al have obtained a PCE of 22.96%. 16 Using Ag2S quantum dot material as a buffer layer for CIGS SCs, Kumar S et al reported PCE of 26.12% and V oc of 1.08 V. 17 Using ZnS as a buffer layer and SnS as a back surface field (BSF) layer, P. Chauhan et al have reported PCE of 18.18%, V oc of 0.78 V, J sc of 27.78 mA/cm 2 , and FF of 83.07%.…”