2019
DOI: 10.1021/acsami.8b17689
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Sulphur Source-Inspired Self-Grown 3D NixSy Nanostructures and Their Electrochemical Supercapacitors

Abstract: Sulphur source-inspired self-grown polycrystalline and mesoporous nickel sulfide (Ni x S y ) superstructures with vertically aligned nanomorphologies viz. rods, flakes, buds, and petals, synthesized at elevated temperatures and moderate pressures by a facile one-pot hydrothermal method on a three-dimensional Ni foam demonstrate remarkable areal specific capacitances of 7152, 4835, and 2160 F cm −2 at current densities of 1, 2, and 5 mA cm −2 , respectively, with a cycling stability of 94% for a battery-type el… Show more

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Cited by 70 publications
(48 citation statements)
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“…Balayeva et al [22] prepared nickel sulfide (NiS and Ni3S4) nanostructures at different sulfur sources like thiourea and sodium sulfide. However, Shinde et al [23] investigated the sulfur Source-Inspired Self-Grown 3D NixSy Nanostructures and their electrochemical supercapacitors by hydrothermal method. Based on the past year, the nickel sulfide thin films can be deposited by various methods such as laser ablation (NiS) [24], successive ionic layer adsorption reaction (SILAR) technique [25], soft solution-processing (Ni3S2, NiS2, and Ni3S4) [26], hydrothermal method (Ni3S2, NiS) [27] chemical vapor deposition (AACVD) method (NiS and Ni17S18) [28], and spray pyrolysis [29].…”
Section: Introductionmentioning
confidence: 99%
“…Balayeva et al [22] prepared nickel sulfide (NiS and Ni3S4) nanostructures at different sulfur sources like thiourea and sodium sulfide. However, Shinde et al [23] investigated the sulfur Source-Inspired Self-Grown 3D NixSy Nanostructures and their electrochemical supercapacitors by hydrothermal method. Based on the past year, the nickel sulfide thin films can be deposited by various methods such as laser ablation (NiS) [24], successive ionic layer adsorption reaction (SILAR) technique [25], soft solution-processing (Ni3S2, NiS2, and Ni3S4) [26], hydrothermal method (Ni3S2, NiS) [27] chemical vapor deposition (AACVD) method (NiS and Ni17S18) [28], and spray pyrolysis [29].…”
Section: Introductionmentioning
confidence: 99%
“…The peak at ≈99.6 eV can be attributed to the Si—C bond whereas the other three signals corresponding to the binding energies of ≈101.4, 102.5, and 104.9 eV are assigned to some intermediate oxidation products of SiC existing on the surface as SiOC 3 , SiO 2 C 2 , and SiO 3 C respectively . Also, Bi 4f spectrum exhibited two prominent peaks at ≈161.5 and 166.9 eV indicating the Bi 4f 7/2 and Bi 4f 5/2 states where the peak spacing of ≈5.3 eV is observed which corresponds to the Bi 3+ oxidation state in Bi 2 O 3 (Figure D) . The core‐level Co 2p and Zn 2p spectra are shown in Figure E,F where in Co 2p two sharp peaks are observed at binding energies ≈782.5 and 797.8 eV that are relative to Co 2p 3/2 and Co 2p 1/2 states.…”
Section: Resultsmentioning
confidence: 99%
“…Consequently, these reactions improve the faradaic capacitive current due to change in their multiple valence states . In addition, the ZnO structure contributes to the charge storage via chemisorptions/desorption of K + /Na + ions as shown below …”
Section: Resultsmentioning
confidence: 99%
“…As a result, some alternative strategies including the design of semiconductor heterostructures have been proposed to optimize the performance of MoS 2 ‐based optoelectronics. In particular, the dangling‐bond‐free surface of 2D‐MoS 2 enables the integration of a variety of semiconductor nanostructures with geometrical configurations of zero dimensional (0D), one dimensional (1D) and 2D into mixed‐dimensional heterostructures . Due to the synergistic effect of the components, MoS 2 ‐based heterostructure PDs have illustrated improved photoresponsivity and response time .…”
Section: Introductionmentioning
confidence: 99%