Tin-based halide perovskite materials are promising ecofriendly light absorbers with similar optoelectronic properties to lead-based ones. However, their solar cells have suffered from considerably low open-circuit voltage (V OC ) arising from mismatched energy levels between tin-based perovskite and chargetransporting layers because they imitate typical device structures developed for lead-based ones. Herein, we report that the lowest unoccupied molecular orbital (LUMO) level of the electron-transporting layer (ETL) significantly affects V OC of tin-based perovskite solar cells (PSCs) in contrast to lead-based ones. The indene-C 60 bisadduct ETL with a much higher LUMO level than that of typical ETLs decreases an energy off-set with the conduction band minimum of the mixed formamidinium/phenylethylammonium tin iodide (FA 0.9 PEA 0.1 SnI 3 )-based perovskite material. The resultant reduced V OC loss at their interface gives a V OC of 0.651 V, the highest to date for FASnI 3 -based PSCs. The achieved champion power conversion efficiency reaches 7.05%. This result highlights the importance of redesigning device structures dedicated to tin-based PSCs.