Ge1–x
Sn
x
nanocrystals (NCs) are a class
of direct-gap semiconductors
that show size- and composition-tunable energy gaps and enhanced absorption
and emission properties compared to single-element Ge NCs. With decreasing
size and increasing Sn content, optical transition oscillator strength
and absorption increases, making these NCs attractive for optoelectronic
devices, field effect transistors, and charge storage applications.
Herein, we report the synthesis of Ge1–x
Sn
x
NCs with varying sizes (ranging
from 4.7 ± 0.6 to 8.6 ± 1.9 nm) and varying Sn compositions
(x = 0.01–0.08), followed by successful exchange
of insulating surfactant ligands with molecular metal chalcogenides
(MCCs), to produce solution-processed conductive NC thin films. Structural
and surface analysis of pre- and post-exchanged NCs indicates a diamond
cubic structure and replacement of amine surface ligands with the
MCC. Electron micrographs of alloy NCs show a notable decrease in
size upon ligand exchange, which is consistent with the etching induced
by chalcogenide ligands. The size confinement effects have resulted
in energy gaps that are significantly blue-shifted from bulk Ge for
the Ge1–x
Sn
x
alloy quantum dots with composition-tunable solution-state
(1.68–1.26 eV for x = 0.01–0.08) energy
gaps and solid-state (1.54–1.20 eV for x =
0.01–0.08) absorption onsets. Electrical characterization of
the uniform NC films (thickness = 197 ± 5 nm) reveals that the
films are insulating prior to ligand exchange and show >3 orders
of
magnitude increase in conductivity (3.5 × 10–6 S/cm for Ge0.92Sn0.08 NCs) upon functionalization
with MCC. The electrical conductivity of the films increases with
the increasing Sn composition (1.2 × 10–6–3.5
× 10–6 S/cm for x = 0.01–0.08),
which is consistent with the increased spin-orbital coupling and reduction
in energy gaps realized through homogeneous alloying of cubic Ge and
α-Sn.