Achieving
high stability is critical for the implementation of
organic electrochemical transistors (OECTs) in more diverse and demanding
applications. However, the sources and mechanisms of OECT degradation
have not been rigorously explored. Here, we employ a variety of biasing
schemes to separate the relative effects of oxidative bias stress,
reductive bias stress, and current stress on degradation of thiophene-based,
p-type OECTs. We find that accelerated degradation arises from the
compounding effects of simultaneous oxidative and reductive bias stress
and is common across several thiophene-based channel materials. To
understand the underlying mechanism of OECT channel degradation, we
explore the individual contributions of dissolved oxygen and source-drain
electrode materials. We determine that the reaction of dissolved oxygen
at the buried Au/OMIEC interface of the drain electrode experiencing
reductive potentials produces a mobile reactive species that aggressively
degrades the oxidized OMIEC throughout the device, destroying its
conjugation and disrupting electronic charge transport. Importantly,
we find that this mechanism can be disrupted by alternatively removing
oxygen, avoiding reductive potentials in the device biasing scheme,
replacing Au electrodes with a noncatalytic alternative, or passivating
Au electrodes with self-assembled monolayers. These conclusions can
inform both future standards of stability testing in the field as
well as design considerations of OECT implementation in long-term
applications.