Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

Бессолов, В. Н.; Zhilyaev, Yu. V.; Konenkova, E. V.; Lebedev, Mikhail V.

doi:10.1134/1.1259113

Cited by 21 publications

(15 citation statements)

References 18 publications

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“…In the last years a great attention is devoted to the sulfur passivation of the GaAs surface. 5,6 In evaluating the advantages or drawbacks of a method with respect to another to improve the GaAs surface, the problem arises of the estimation of S. It has been well established [5][6][7] that the photoluminescence ͑PL͒ technique is a straightforward method which account qualitatively for S, since the PL signal depends directly on the photogenerated minority carrier distribution near the surface. Some electrical methods have also been used to surface pas-sivation studies.…”

Section: Photoacoustic Determination Of the Recombination Velocity Atmentioning

confidence: 99%

Photoacoustic determination of the recombination velocity at the AlGaAs/GaAs heterostructure interface

Reich

Díaz

Prutskij³

et al. 1999

Journal of Applied Physics

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Photoacoustic study of the effect of aluminum content on the thermal and thermomechanical properties of Al y Ga 1−y As on GaAs in the range (0y1)The surface recombination velocity at the AlGaAs/GaAs single heterostructure interface is determined using the photoacoustic technique. We analyze different heat generation mechanisms for this type of heterostructure with different Al composition and thickness of the AlGaAs layers. A theoretical model of the photoacoustic signal generation in the heat transmission detection configuration was developed. The values of the surface recombination velocity obtained by comparing the theoretical expressions with the experimental results are in good agreement with the literature reported ones. The results were also correlated with those of photoluminescence measurements in the same samples.

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Section: Photoacoustic Determination Of the Recombination Velocity Atmentioning

confidence: 99%

Photoacoustic determination of the recombination velocity at the AlGaAs/GaAs heterostructure interface

Reich

Díaz

Prutskij³

et al. 1999

Journal of Applied Physics

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“…Therefore, any liquid which contains protons after self-dissociation can be used as a solvent in passivating sulfide solution. 21 Besides, the photoluminescence properties of GaAs treated in isopropanol-based sulfide solutions remain constant even after intensive laser irradiation. Other protic liquids including different alcohols also could be considered as a solvent in passivating solutions.…”

Section: Introductionmentioning

confidence: 99%

Solvent effect on the properties of sulfur passivated GaAs

Бессолов

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Photoluminescence and x-ray photoelectron spectroscopy have been used to study the solvent effect on surface properties of GaAs passivated in different sulfide solutions. It has been found that sulfur passivation could be made more efficient by decreasing the solution dielectric constant through the use of various alcohols as solvents. Specifically, the band edge photoluminescence intensity is much higher, the total amount of oxides is lower, and sulfur coverage is higher compared with a GaAs surface treated in an aqueous sulfide solution. The role of the solvent in sulfur passivation is discussed.

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“…The sulfide passivation has been found to reduce the surface recombination velocity and surface states [7]. The S/GaAs structures have been studied both experimentally [8] and theoretically via computer calculations [9]. It is found that S atom forms bridge bonds with Ga in the 0 1 1 azimuth on the GaAs (1 0 0) [10].…”

Section: Introductionmentioning

confidence: 98%