Suitability of Various Materials for Probes in Scanning Kelvin Probe Measurements

Huber, S.; Wicinski, Mariusz; Hassel, Achim Walter

doi:10.1002/pssa.201700952

Cited by 9 publications

(8 citation statements)

References 30 publications

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“…The temperature was kept constant at 25 ± 0.5 °C and the relative humidity at 3 ± 0.5%. The SKP probe material was a NiCr alloy probe tip with a diameter of 300 μm, with this selection being based on previous studies . Calibration of the system was done prior to each measurement by using a Cu crucible filled with saturated aqueous solution CuSO 4 .…”

Section: Methodsmentioning

confidence: 99%

“…The SKP probe material was a NiCr alloy probe tip with a diameter of 300 μm, with this selection being based on previous studies. [27,28] Calibration of the system was done prior to each measurement by using a Cu crucible filled with saturated aqueous solution CuSO 4 . All Volta potentials are referred to the standard hydrogen electrode (SHE).…”

Section: Scanning Kelvin Probe (Skp)mentioning

confidence: 99%

“…The strongest influence on the crystallinity of the ZnO film is achieved through the addition of W that has as a result the complete amorphization of ZnO as indicated by the absence of any diffraction peaks. In order to better observe the shift of main peaks as a function of the doping element, in Figure 4b diffractograms are plotted only in a limited 2θ range (28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40). The addition of dopants leads to a shift of the peaks toward lower 2θ angles, in the following order: Ti:ZnO, Zr:ZnO, and the stronger effect is observed for Mn:ZnO.…”

Section: Xrdmentioning

confidence: 99%

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Structural, Electrical, and Optical Effects of Metal Doping on ZnO Thin Films

Huber

Mardare

Kleber

et al. 2019

Physica Status Solidi (a)

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Doped ZnO thin films are prepared by reactive co‐sputtering of ZnO and a metal (Mn, Ti, W, and Zr). Structural and morphological analysis is done by means of SEM/EDX, XRD, and AFM. Electrical properties in terms of Volta potential are determined via Scanning Kelvin Probe (SKP), UV–VIS spectroscopy is employed to investigate optical properties. Band gaps Eg are obtained using Tauc plots. Doping of ZnO led to significant differences regarding structural, electrical, and optical properties. Morphology of doped ZnO tends to be smoother and more compact, as compared to the pristine ZnO. XRD measurements proved that W doped ZnO films exhibit an amorphous structure, whereas a secondary phase present in the Mn doped ZnO is strongly suggested. W and Mn as dopants lead also to special band gap positions in UV spectroscopy. W:ZnO exhibits a higher value for Eg whereas band gaps of Ti:ZnO and Zr:ZnO are similar to pristine ZnO. For Mn:ZnO two band gaps can be obtained. One is slightly higher and the other one is significantly lower than the one of pristine ZnO. Volta potential doubled when ZnO is doped with W, Zr, or Ti as compared to the pristine ZnO. Mn doped ZnO resulted in a lower Volta potential than pristine ZnO.

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Section: Methodsmentioning

confidence: 99%

Section: Scanning Kelvin Probe (Skp)mentioning

confidence: 99%

Section: Xrdmentioning

confidence: 99%

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Structural, Electrical, and Optical Effects of Metal Doping on ZnO Thin Films

Huber

Mardare

Kleber

et al. 2019

Physica Status Solidi (a)

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“…The measured CPD values show a variation of almost 0.20 V between different alloys in the Hf–Nb–Ta system. This variation is significantly larger than the normal CPD noise of approximately ±5 mV measured above a homogeneous metallic surface [35,36]. The Volta potential of individual alloys across the library depends mainly on the Hf concentration.…”

Section: Resultsmentioning

confidence: 99%

Basic properties mapping of anodic oxides in the hafnium–niobium–tantalum ternary system

Mardare

Kollender

et al. 2018

Science and Technology of Advanced Materials

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A thin film combinatorial library deposited by co-sputtering of Hf, Nb and Ta was employed to characterise fundamental properties of the Hf-Nb-Ta system. Compositional mappings of microstructure and crystallography revealed similarities in alloy evolution. Distinct lattice distortion was observed upon addition of hexagonal Hf, leading to amorphisation of alloys containing more than 32 at.% Hf and less than 27 and 41 at.% Nb and Ta, respectively. Volta potential and open circuit potential mappings indicated minimal values for the highest Hf concentration. Localised anodisation of the library by scanning droplet cell microscopy revealed valve metal behaviour. Oxide formation factors above 2 nm V−1 were identified in compositional zones with high amounts of Nb and Ta. Fitting of electrochemical impedance spectroscopy data allowed electrical permittivity and resistivity of mixed oxides to be mapped. Their compositional behaviours were attributed to characteristics of the parent metal alloys and particularities of the pure oxides. Mott–Schottky analysis suggested n-type semiconductor properties for all Hf–Nb–Ta oxides studied. Donor density and flat-band potential were mapped compositionally, and their variations were found to be related mainly to the Nb amount. Synergetic effects were identified in mappings of Hf-Nb-Ta parent metals and their anodic oxides.

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“…The WF of the substrates was measured using a Kelvin probe [ 26 ]. Briefly, the samples were scanned using a vibrating tungsten needle with a diameter of 500 µm, as shown in Figure 4 .…”

Section: Methodsmentioning

confidence: 99%

Fermi-Level Tuning of G-Doped Layers

Tavkhelidze¹,

Bibilashvili²,

Jangidze³

et al. 2021

Nanomaterials

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Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping. In this study, G-doped junctions were fabricated and characterized and the Fermi-level tuning of the G-doped layers by changing the NG depth was investigated. Samples with various indent depths were fabricated using laser interference lithography and a consecutive series of reactive ion etching. Four adjacent areas with NG depths of 10, 20, 30, and 40 nm were prepared on the same chip. A Kelvin probe was used to map the work function and determine the Fermi level of the samples. The G-doping-induced Fermi-level increase was recorded for eight sample sets cut separately from p-, n-, p+-, and n+-type silicon substrates. The maximum increase in the Fermi level was observed at a10 nm depth, and this decreased with increasing indent depth in the p- and n-type substrates. Particularly, this reduction was more pronounced in the p-type substrates. However, the Fermi-level increase in the n+- and p+-type substrates was negligible. The obtained results are explained using the G-doping theory and G-doped layer formation mechanism introduced in previous works.

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Suitability of Various Materials for Probes in Scanning Kelvin Probe Measurements

Cited by 9 publications

References 30 publications

Structural, Electrical, and Optical Effects of Metal Doping on ZnO Thin Films

Structural, Electrical, and Optical Effects of Metal Doping on ZnO Thin Films

Basic properties mapping of anodic oxides in the hafnium–niobium–tantalum ternary system

Fermi-Level Tuning of G-Doped Layers

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