Suitability of present silicon bipolar IC technologies for optical fibre transmission rates around and above 10 Gbit/s

Rein, H.-M.; Hauenschild, J.

doi:10.1049/ip-g-2.1990.0039

Cited by 10 publications

(1 citation statement)

References 5 publications

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“…The simulation conditions are presented and discussed in [6] and shall, therefore, not be repeated here. All known parasitics like bond inductances and pad capacitances have been taken into account (for the values assumed see [6]).…”

Section: Circuit Diagram and Few Remarks On Circuit Design And Simulamentioning

confidence: 99%

Design of a Silicon Bipolar Laser- and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s

Rein¹

1992

Frequenz

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The design of a very-high-speed versatile laser-and line-driver 1C in silicon bipolar«technology is described. The most important aim is to show how to obtain an optimum (symmetrical) output pulse shape in a wide range of operating speed and output current swing, despite the fact that single-ended operation is applied at both the input and output. This task is solved by using a two-stage circuit concept which allows to optimally adjust two important internal offset voltages and, if required, an internal voltage swing via external potentiometers. These adjustments are independent of the operating speed and virtually also of the (easily controllable) output current swing. Finally, it is demonstrated by simulation that with advanced silicon bipolar technologies laser drivers for 10 Gbit/s optical-fiber transmission systems can be realized.Übersicht: Der Entwurf eines sehr schnellen und vielseitigen Laser-und Leitungstreibers in Silizium-Bipolar-Technologie wird beschrieben. Das wichtigste Ziel der Arbeit ist zu zeigen, wie man trotz Eintaktbetrieb eine optimale (symmetrische) Impulsform am Ausgang erreichen kann, und zwar in einem weitenBereich der Datenrate und des Ausgangshubs. Diese Aufgabe läßt sich durch ein zweistufiges Schaltungskonzept lösen, bei dem zwei wichtige interne Offset-Spannungen und, falls erforderlich, ein interner Spannungshub über externe Potentiometer eingestellt werden können. Die optimale Einstellung ist unabhängig von der Datenrate und weitgehend auch von dem (leicht einstellbaren) Ausgangshub. Schließlich wird durch Simulation gezeigt, daß mit fortschrittlichen Silizium-Bipolar-Technologien Lasertreiber für Glasfaser-Übertragungssysteme mit Datenraten von 10 Gbit/s realisierbar sind. Für die Dokumentation: Schnelle Silizium-Schaltungen / Lasertreiber / digitale Treiberstufen / Pulsformung

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Section: Circuit Diagram and Few Remarks On Circuit Design And Simulamentioning

confidence: 99%

Design of a Silicon Bipolar Laser- and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s

Rein¹

1992

Frequenz

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20‐gb/s optical transmitter and receiver using sige integrated circuits

Tezuka

Fukuchi

Takeuchi

et al. 1996

Electron. Comm. Jpn. Pt. I

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IntroductionA 20(ib/s optical transmitter and a receiver with 3R functions is developed for ultrahigh-speed optical communication systems for future multimedia communications. Lntegrated circuits (ICs), such as preamplifiers, differential amplifiers, D-type flip-flop (D-FIF), and selectors with a 20Gb/s operating speed have been developed using the SiGe process as key components of the optical transmitter and receiver. A waveguide pinphotodiode with very low capacitance is used to realize a wide bandwidth. A f r o n t e d module with a bandwidth of 16 GHz and a gain of 43 dBP has been achieved using the preamplifier IC and the waveguide pin-phdodiode (PD). A 20-Gbls optical transmitter and a receiver is fabricated using the developed SiGe. ICs, high-speed optical devices, and a receiver sensitivity of -23 dBm are obtained. Himhi Tezukagraduated from the Department of Physics of the University of Tokyo in 1989. In 1991, he received his M.S. degree from there and joined NEC. He has been engaged in development of high-speed optical communication systems. He is currently with Opto-Electronics Research Laboratories, NEC. Kiyoshi Fukuchi received his B.S. end M.S. degrees from the Department of Electronic Engineering, University of Tokyo, in 1989 and 1991, respectively. Then he joined NEC. He has been engaged in development of high-speed optical communication systems. He is currently with Opto-Electronics Research Laboratories, NEC. Takeshi Takeuchi received his B.S. and M.S. degrees from the Department of Electronic Physics Engineering, Tokyo Institute of Technology, in 1988 and 1990, respectively. Then he joined NEC. He has been engaged in research on photodetectors for optical communication systems. He is currently with Opto-Electronics Research Laboratories, NEC. Takasuke Hashimot0 received his B.S. and M.S. degrees from the Department of Electronic Physics Engineering of the Institute of Electronic Communication in 1988 and 1990, respectively. Then he joined NEC. He has been engaged in development of ultrahigh-speed S I C . He is currently with the ULSI Device Development Laboratories, NEC. Masaaki Soda received his B.S. and M.S. degrees from the Department of Electronic Engineering, Kyushu University, in 1988 and 1990, respectively. Then he joined NEC. He has been engaged in the development of hgh-speed optical communication systems. He is currently with Opto-Electronics Research Laboratories, NEC. Fumihiko Sat0 graduated from the Department of Applied Physics of the University of Tokyo in 1982. Then he joined NEC. He has been engaged in the development of ultrahigh-speed Si-IC. He is currently with ULSI Device Development Laboratories, NEC. Tetsuyuki Suzaki received his B.S. and M.S. degrees from the Department of Natural Science of Tsukuba University in 1985 and 1987, respectively. Then he joined NEC. He has been engaged in the development of high-speed optical communication systems. He is currently with Opto-Electronics Research Laboratories, NEC.

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Recent progress in silicon homo- and heterojunction bipolar technology

Treitinger

1991

Microelectronic Engineering

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Suitability of present silicon bipolar IC technologies for optical fibre transmission rates around and above 10 Gbit/s

Cited by 10 publications

References 5 publications

Design of a Silicon Bipolar Laser- and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s

Design of a Silicon Bipolar Laser- and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s

20‐gb/s optical transmitter and receiver using sige integrated circuits

Recent progress in silicon homo- and heterojunction bipolar technology

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