Suitability of drift nonlinearity in Si, GaAs, and InP for high-power frequency converters with a 1 THz radiation output

Brazis, R.; Raguotis, R.; Siegrist, Michael

doi:10.1063/1.368522

Cited by 20 publications

(18 citation statements)

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“…The amplitudes and phases of the drift velocity harmonics tend to saturate at high pumping wave fields. Similar behavior is observed for other principal directions [9]. The anisotropy of the third order nonlinearity is most pronounced at low pumping wave fields (Fig.…”

Section: Theorysupporting

confidence: 63%

“…Actually, THG power saturation is observed in experiments. It is explained on the basis of numerical calculations of the self-adjusted spatial distributions of electron drift velocity and the pumping wave electric field amplitudes [9]. The amplitude and phase of the Fourier components of electron drift velocity dependence on the fundamental wave electric field amplitude is used to calculate the electronic part of the linear and nonlinear susceptibility.…”

Section: Discussionmentioning

confidence: 99%

“…With the assumption, that the electron contribution in (4) and (5) is small, for thin slabs it can be expressed as [9]:…”

Section: Theorymentioning

confidence: 99%

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Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

et al. 2011

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We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise of the sample thickness up to a threshold value, and decreases dramatically above the threshold. At shorter propagation distances the generation efficiency could be correctly simulated using the layered medium approximation and the numerically calculated electron drift velocity response to the pumping wave electric field to describe the change of the semiconductor properties under high-power microwave irradiation.PACS: 42.65.Ky, 72.20.Ht IntroductionMeasurements of the three-photon quantum correlation attracted recently considerable interest to the third--order nonlinear interactions, like third harmonic generation (THG) or triple photon generation in optical experiments. Direct generation experiment is difficult, because in optical media the 3rd order nonlinear susceptibility χ 3 is several orders of magnitude lower than the second--order one, as well as due to the phase matching constraints. Only a few THG experiments were performed: in the noncentrosymmetrical crystals, where the second order nonlinearity has been suppressed along the selected axis [1,2], and in the rutile crystal with the inversion center, where the 2nd order effects vanish due to the crystal symmetry [3]. THG efficiency up to 2.5% has been achieved in these measurements. In the terahertz (THz) range that is in between the far-infrared and millimeter--wave ranges, the high-power wave harmonic generation is difficult because of the large-scale aperture of quasi--optical nonlinear samples needed for low diffraction loss. Primary experimental investigations of the THG in quasi--optical systems have been carried out in n-type silicon revealing the efficiency of about 0.1% [4][5][6]. The causes of this rather low efficiency have not been explored. The 3rd order susceptibility values estimated in particular experiments have been found to be quite different challenging for additional experiments.It has been suspected that the pump wave self-action can change the spatial structure of fundamental wave and the 3rd harmonic wave beams preventing the THG efficiency optimization.

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Section: Theorysupporting

confidence: 63%

Section: Discussionmentioning

confidence: 99%

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Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

et al. 2011

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“…Figure 12 plots the FDTD-calculated bistable hysteresis of devices with varying thickness h and line width w, [43] (circles) and the analytic model calculations using Eqs. (12) and (14) [44,45]. The obtained results indicate that the bistability can occur for a device with thickness of 60 μm ( Figure 12A), that is 1/25 of the operating wavelength; also, the bistability threshold field is essentially independent of the film thickness…”

Section: Enhancement Of the Non-linear Optical Effectsmentioning

confidence: 53%

Fractal plasmonic metamaterials: physics and applications

Tang¹,

He²,

Xiao³

et al. 2015

Nanotechnology Reviews

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Abstract:We review our recent works on a particular type of metamaterials (MTMs), which are metallic plates drilled with periodic arrays of subwavelength apertures typically in fractal-like complex shapes. We first show that such MTMs can well mimic plasmonic metals in terms of surface plasmon properties, but with plasmon resonances solely dictated by their aperture geometries rather than the constitutional materials. We then develop an effective-medium description for such plasmonic MTMs based on the mode expansion theory. Based on these theoretical understandings, we show that such MTMs exhibit several interesting applications, such as superlensing, hyperlensing, and enhancing light-matter interactions, which are demonstrated by microwave experiments or full-wave simulations.

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“…With this aim the process of harmonic emission arising from the interaction of semiconductor structures with intense radiation fields, having frequencies in the sub-THz range, has been both experimentally (Brazis et al, 1998;Moreau et al, 1999;Urban et al, 1995;1996) and theoretically (Persano Adorno et al, 2000;2004;2007a;Shiktorov et al, 2002a; widely investigated. Moreover, this field of research represents an useful tool for the general understanding of several features of the highly non linear processes of carrier transport in low-doped semiconductors.…”

Section: A Short Introduction To the Problemmentioning

confidence: 99%

Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxation

Adorno¹

2011

Applications of Monte Carlo Method in Science and Engineering

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IntroductionIn solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomena involved in the devices response, an analysis of the electron dynamics in low-doped semiconductors far from equilibrium conditions is very important. Semiconductor spintronics offers a possible direction towards the development of hybrid devices that could perform logic operations, communication and storage, within the same material technology: electron spin could be used to store information, which could be transferred as attached to mobile carriers and, finally, detected. Despite these advantages, for the operability of prospective spintronic devices, the features of spin relaxation at relatively high temperatures, jointly with the influence of transport conditions, should be firstly well understood. This chapter reviews recent results obtained by using a three dimensional semiclassical multivalleys Monte Carlo code to simulate the nonlinear carrier dynamics in low-doped GaAs bulks (Persano Adorno et al., 2009a;Spezia et al., 2010). The aim is to discuss and clarify the most relevant findings obtained by the investigation of: (a) the harmonic generation process and (b) the spectral density of the electron velocity fluctuations in the presence of intense sub-terahertz electric fields;(c) the influence of temperature and transport conditions on the electron spin relaxation. Since Monte Carlo approach includes, at a microscopic level, all the sources of the nonlinearities (hot carriers, velocity overshoot, intervalley transfer, etc.) which take place in electronic devices operating under large-signal conditions, it allows to study harmonic

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Suitability of drift nonlinearity in Si, GaAs, and InP for high-power frequency converters with a 1 THz radiation output

Cited by 20 publications

References 16 publications

Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

Fractal plasmonic metamaterials: physics and applications

Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxation

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