Suitability of carbon nanotubes grown by chemical vapor deposition for electrical devices

Abstract

Using carbon nanotubes (CNTs) produced by chemical vapor deposition, we have explored different strategies for the preparation of carbon nanotube devices suited for electrical and mechanical measurements. Though the target device is a single small diameter CNT, there is compelling evidence for bundling, both for CNTs grown over structured slits and on rigid supports. Whereas the bundling is substantial in the former case, individual single-wall CNTs (SWNTs) can be found in the latter. Our evidence stems from mechanical and electrical measurements on contacted tubes. Furthermore, we report on the fabrication of low-ohmic contacts to SWNTs. We compare Au, Ti and Pd contacts and find that Pd yields the best results.

Conductivity of multiwall carbon nanotubes: Role of multiple shells and defects

“…The contact resistance is lower [96,100,101] and the formation of Schottky barriers is strongly reduced [102]. Ab initio calculations of Nemec, Tománek and Cuniberti [103] confirm these results tracing back the superiority of Pd to metal-nanotube hybridizations.…”

Shot Noise of a Quantum Dot Measured with Gigahertz Impedance Matching

“…The challenge on the fabrication side is to combine a low-disorder CNT with a high-quality microwave circuit. CNT growth is done by chemical vapor deposition (CVD) in a CH 4 and H 2 atmosphere at 950 • C [17]. This process turns out to be harmful to silicon nitride and oxide substrates.…”