Successive crystallization in indium selenide thin films for multi-level phase-change memory

Xu, Zhehao; Yuan, Yukang; Song, Sannian; Zhang, Song; Liu, Ruirui; Zhai, Jiwei

doi:10.1016/j.apsusc.2023.157642

Cited by 8 publications

(6 citation statements)

References 31 publications

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“…As grown InSe thin films prefer the amorphous nature of growth [6][7][8]. Films deposited by the thermal evaporation technique onto amorphous substrates (glass) showed amorphous nature of growth [6].…”

Section: Introductionmentioning

confidence: 99%

“…The crystallinity process needed few hours [7] to be reached. In addition multi-crystallization process in amorphous InSe is achieved via heating process in the temperature range of 25 °C-400 °C [8]. Other works reported the possibility of obtaining crystalline phase of In 2 Se 3 via thermal annealing process in the range of 250 °C-350 °C [9].…”

Section: Introductionmentioning

confidence: 99%

“…Obtaining crystalline phase of InSe is of interest due to the need for using the material in many optoelectronic applications including multi-level storage that can be achieved via phase-change memory cells [8] Crystalline phases of materials are preferred under conditions where high mobility and low resistivity applications are needed [10]. One fast method for achieving crystallinity in materials is the pulsed laser technique [11].…”

Section: Introductionmentioning

confidence: 99%

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Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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In the current study the crystalline phase of indium selenide thin films which were grown by the thermal evaporation technique is achieved via pulsed laser welding technique (PLW) in a second. The films crystallinity is achieved under various welding conditions including the pulse width (PW), repetition frequency (f_r ) and pulse diameter (d). The optimum parameters for obtaining well crystalline phase are PW=1.0 ms, f_r=10Hz and d=1.0 mm. PLW induced crystallinity showed preferred structure relating to monoclinic phase of InSe. Compositionally while amorphous films exhibited In2Se3 chemical structure, crystalline ones preferred InSe phase. Associated with this type of crystallinity, direct and indirect energy band gap values of 2.32 eV and 3.12 eV are determined. The crystalline films showed lower dielectric constant value accompanied with higher optical conductivity and higher terahertz cutoff frequency in the infrared range of light. In addition the dielectric dispersion spectra were treated using Drude-Lorentz model to read the optical conductivity parameters for the PLW assisted crystalline InSe terahertz resonators. The treatment showed that the crystallinity of the films resulted in improved free carrier density, longer relaxation times at femtosecond level, larger plasmon frequencies and higher drift mobility values. These features together with the response of terahertz cutoff frequency to IR excitations make crystalline InSe thin films promising for optoelectronic and terahertz technology applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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“…Currently, the major approaches for realizing MLC include (1) programming strategies, such as MLC PCM-based programming algorithms to control the crystallization ratios of materials through electrical impulses in order to achieve resistance changes; − (2) new device structures to expand the scope of MLC applications, such as nanowire structural design, resonator switching control, and optically controlled PCM; and (3) material engineering to potentially realize multilevel storage, such as nanostacked multilayer composite films , and phase-change materials with multiple crystallization processes. , Recently, interfacial PCM based on GeTe/Ti–Sb 2 Te 3 was proposed to obtain efficient multilevel states with ultralow power consumption . Xu et al . realized multilevel storage by utilizing successive phase transitions of In 2 Se 3 among individual crystalline phases.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping

Yuan,

He,

Qian

et al. 2024

ACS Appl. Mater. Interfaces

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The pressing need for data storage in the era of big data has driven the development of new storage technologies. As a prominent contender for next-generation memory, phase-change memory can effectively increase storage density through multilevel cell operation and can be applied to neuromorphic and in-memory computing. Herein, the structure and properties of Ta-doped MnTe thin films and their inherent correlations are systematically investigated. Amorphous MnTe thin films sequentially precipitated cubic MnTe2 and hexagonal Te phases with increasing temperature, causing resistance changes. Ta doping inhibited phase segregation in the films and improved their thermal stability in the amorphous state. A phase-change memory cell based on a Ta2.8%-MnTe thin film exhibited three stable resistive states with low resistive drift coefficients. The study findings reveal the possibility of regulating the two-step phase-change process in Ta-MnTe thin films, providing insight into the design of multilevel phase-change memory.

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“…Meanwhile, the problem of the "storage wall" formed by the difference in operation speed between processor cache and dynamic random storage in traditional von Neumann systems is more obvious in the era of big data and cloud computing. 1,2 Phase-change memory (PCM), with its good switching efficiency, high complementary metal−oxide− semiconductor (CMOS) compatibility, and scalability is a promising solution to overcome the above bottleneck. 3,4 When the memory is programmed, the high and low resistance between the crystalline state (SET) and the amorphous state (RESET) of the phase-change material in the PCM is recognized as binary logic "0" and "1", and the phase change can be reversibly triggered by electrical pulses or laser light.…”

Section: Introductionmentioning

confidence: 99%

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers

Zhang,

Wu,

et al. 2024

ACS Appl. Mater. Interfaces

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As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb 2 Te 3 material were designed and prepared by inserting the Sn 15 Sb 85 layer. The thermal and electrical properties of superlattice-like Sb 2 Te 3 /Sn 15 Sb 85 phase-change films can be adjusted by controlling the thickness ratio of Sb 2 Te 3 /Sn 15 Sb 85 . In comparison to the monolayer Sb 2 Te 3 film, the multilayer layer Sb 2 Te 3 / Sn 15 Sb 85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb 2 Te 3 /Sn 15 Sb 85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn 15 Sb 85 layers restrains grain growth and refines the grain size. The multilayer Sb 2 Te 3 /Sn 15 Sb 85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb 2 Te 3 . Phase-change memory cells based on the [Sb 2 Te 3 (1 nm)/Sn 15 Sb 85 (9 nm)] 5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge 2 Sb 2 Te 5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb 2 Te 3 (1 nm)/Sn 15 Sb 85 (9 nm)] 5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn 15 Sb 85 layer can significantly improve the crystallization properties of Sb 2 Te 3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

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Successive crystallization in indium selenide thin films for multi-level phase-change memory

Cited by 8 publications

References 31 publications

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers

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Successive crystallization in indium selenide thin films for multi-level phase-change memory

Cited by 8 publications

References 31 publications

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Improvement of Multilevel Memory Performance of MnTe Thin Films by Ta Doping

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers

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Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers