Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures

Hu, Hailong; Zeng, Rong; Pham, Anh; Tan, Teck Meng; Chen, Huajun; Kong, Charlie; Wang, Danyang; Li, Sean

doi:10.1021/acsami.6b01518

Cited by 12 publications

(15 citation statements)

References 29 publications

(25 reference statements)

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“…The formation origin of 2DEG at the oxide heterointerfaces can be related to polar nature of the LAO atomic planes, or to oxygen vacancies, or to interdiffusion phenomena. The characteristics at LAO/STO interface have attracted considerable interest, because of its various fascinating properties such as the high electron mobility, superconductivity, magnetism, photoresistive effect, tunable spin–orbit coupling and quantum Hall effect . The LAO/STO interface exhibiting metallic properties with the LAO layer larger than 4 unit cell (uc) makes it to have great advantages as nanoscale sensors and controllable channel for nanoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Gao

Huang

et al. 2018

Adv Materials Inter

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exhibiting metallic properties with the LAO layer larger than 4 unit cell (uc) makes it to have great advantages as nanoscale sensors and controllable channel for nanoelectronic devices. In addition, the novel electronic states at the oxide interfaces have been modulated by various external stimuli, such as electric field, magnetic field, strain, and light. [21][22][23][24][25] For example, Brown et al. discovered a fully reversible conductance change at the LAO/STO interface regulated by LAO surface protonation. [26] However, the unstable resistance switching properties of the structure cannot be widely used in devices. Kim et al. reported the control of the LAO/STO interfacial conductivity depends on the polarization of epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 film, [27] and the large resistance switching ratio with high power consumption. However, Pb is harm to the environment. In addition, the polarization-controlled interfacial conductivity has not fully explained. As is well known, BFO films exhibit multiferroic properties at room temperature, [28][29][30][31][32][33] which have potential applications in the information technology, such as sensors and spintronics devices. Mix et al. investigated the conductance control at the LAO/STO interface by switching the polarization of the BFO layer, showing a hysteretic behavior with the poling voltage and realizing the control of interface conductivity. [34] However, resistance switching ratio is just 1.15, which is easy to cause the misoperation in using, since the high and low resistance states (LRS) are difficult to be distinguished.In this work, we investigated the polarization-controlled reversible resistance switching of 2DEG at the BFO/LAO/STO heterointerface by switching the polarization of the BFO layer and light illumination. For comparing the roles of the BFO and LAO layers playing, the BFO/STO and LAO/STO heterostructures were also fabricated and investigated. Only the BFO/STO and BFO/LAO/STO heterostructures exhibit the 2DEG resistance changes by switching the electric fields, which indicates that the BFO and LAO layers both play the crucial roles in switching the polarization of the BFO layer in the 2DEG resistance switching. And the ratio of the 2DEG resistance switching of the BFO/LAO/STO device is as large as 10 2 , the largest resistance switching ratio in free-lead ferroelectric devices so far. The three memory states (virgin, high resistance, and low resistance state) could also be modulated by the light illumination, attributed to the separation of photogenerated electron-hole pairs Resistance modulation of 2D electron gas (2DEG) at oxide heterointerfaces has recently attracted extensive interests in nonvolatile memory and various sensors. Specially, ferroelectric devices based on 2DEG resistance switching at oxide heterointerfaces by ferroelectric polarization are particularly important in memory and light sensors. Herein, a nonvolatile ferroelectric memristor is reported by the 2DEG resistance change at an LaAlO 3 /SrTiO 3 heterointerface by switching...

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Section: Introductionmentioning

confidence: 99%

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Gao

Huang

et al. 2018

Adv Materials Inter

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“…Room temperature magnetic force microscopy was also used to probe the magnetic landscape emerging as the electrons at the LAO/STO interface was depleted using a top gate 25 . Additional experimental signatures of magnetism stem from (i) magnetometry measurements without spatial resolution, such as SQUID 26 & torque magnetometry 19 , (ii) transport measurements reporting Kondo-like resistance minima 27,28 , anomalous Hall effect [29][30][31] & negative or anisotropic magnetoresistance 26,[28][29][30]32,33 and (iii) irradiation-based techniques such as β-decay from nuclear magnetic resonance 34 & X-ray magnetic circular dichroism 35 . The magnetic state, however, remains poorly understood, and several studies fail to detect the magnetic state using, e.g., scanning SQUID 36 and neutron reflectometry 37 .…”

mentioning

confidence: 99%

Strain-tunable magnetism at oxide domain walls

et al. 2018

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“…Interfacial charge carriers were separated into a 2DEG conducting region and a ferromagnetic phase. Hu et al also observed oxygen partial pressure-dependent hysteretic loops at various temperatures in LAO/STO . It was found that the magnetization of the sample grown under low oxygen pressure is much larger than that of the high-oxygen-pressure-grown sample.…”

Section: Spin-polarized 2degsmentioning

confidence: 93%

“…For the magnetotransport measurements with the applied magnetic field in an in-plane geometry, negative magnetoresistance (NMR) ,, (Figure d) and anisotropic magnetoresistance (AMR) (Figure e) are widely reported as the fingerprint of the magnetic scattering at the LAO/STO interfaces. ,− By magnetotransport measurements, a giant NMR was demonstrated by Diez et al in the LAO/STO system . Itinerant conducting carriers interact with the magnetic impurities thus leading to this large NMR.…”

Section: Spin-polarized 2degsmentioning

confidence: 94%

Recent Advances on Spin-Polarized Two-Dimensional Electron Gases at Oxide Interfaces

Niu

Wang

et al. 2021

ACS Appl. Electron. Mater.

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Two-dimensional electron gases (2DEGs) at oxide heterointerfaces show a plethora of intriguing properties and functionality, which has been the focus of intense study in recent years. Rashba spin–orbit coupling stemming from the symmetry breaking supplies the oxide interfaces with a versatile handle to generate, transport, detect, and convert spin current. This review provides a summary of the recent advances on the 2DEGs at oxide interfaces for spintronic applications, mainly focusing on spin-polarized 2DEGs, spin generation and detection, spin-to-charge interconversion, and spin transport of 2DEGs. All of these intriguing properties not only show great promise for the 2DEGs at oxide interfaces in all-oxide spintronics devices but also expand the boundaries of our understanding of this profound cutting-edge field.

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Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO₃/SrTiO₃ Heterostructures

Cited by 12 publications

References 29 publications

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Strain-tunable magnetism at oxide domain walls

Recent Advances on Spin-Polarized Two-Dimensional Electron Gases at Oxide Interfaces

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Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO3/SrTiO3 Heterostructures

Cited by 12 publications

References 29 publications

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface

Strain-tunable magnetism at oxide domain walls

Recent Advances on Spin-Polarized Two-Dimensional Electron Gases at Oxide Interfaces

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Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO₃/SrTiO₃ Heterostructures

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface

Reversible Resistance Switching of 2D Electron Gas at LaAlO₃/SrTiO₃ Heterointerface