Subthreshold Swing of 59 mV decade<sup>−1</sup> in Nanoscale Flexible Ultralow‐Voltage Organic Transistors

Geiger, Michael; Lingstädt, Robin; Wollandt, Tobias; Deuschle, Julia; Zschieschang, Ute; Letzkus, Florian; Burghartz, Joachim N.; Aken, Peter A. van; Weitz, R. Thomas; Klauk, Hagen

doi:10.1002/aelm.202101215

Cited by 22 publications

(32 citation statements)

References 79 publications

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“…The contact resistance of the DPh-DNTT TFTs fabricated by electron-beam lithography reported here is thus smaller than the contact resistance reported in about 80% of all previous publications in which the contact resistance of organic TFTs has been reported (7,45). It is, however, larger by about an order of magnitude than the contact resistance reported previously for DPh-DNTT TFTs fabricated by stencil lithography (7,8,42). The larger contact resistance of the TFTs fabricated by electronbeam lithography is possibly the result of contamination of the contact surfaces during the liftoff process that follows the electron-beam lithography process, and/or due to the relatively sharp edges of the contacts when these are patterned by electron-beam lithography, rather than stencil lithography (46).…”

Section: Contact Resistancecontrasting

confidence: 72%

Nanoscale flexible organic thin-film transistors

et al. 2022

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Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small as 200 nm and gate-to-contact overlaps as small as 100 nm on glass and on flexible transparent polymeric substrates. The p-channel transistors have on/off current ratios as large as 4 × 10 9 and subthreshold swings as small as 70 mV/decade, and the n-channel transistors have on/off ratios up to 10 8 and subthreshold swings as low as 80 mV/decade. These are the largest on/off current ratios reported to date for nanoscale organic transistors. Inverters based on two p-channel transistors with a channel length of 200 nm and gate-to-contact overlaps of 100 nm display characteristic switching-delay time constants between 80 and 40 ns at supply voltages between 1 and 2 V, corresponding to a supply voltage–normalized frequency of about 6 MHz/V. This is the highest voltage-normalized dynamic performance reported to date for organic transistors fabricated by maskless lithography.

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Section: Contact Resistancecontrasting

confidence: 72%

Nanoscale flexible organic thin-film transistors

et al. 2022

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“…To compare the performance of 1L‐C 6 ‐DNTT OFETs with reported OFETs, we hereby summarized the reported works with R c lower than 100 Ω cm in Figure a. [ 4,15,18,19,43–49 ] The high µ 0 of 10.9 ± 0.3 cm 2 V –1 s –1 and low R c of 28 ± 3 Ω cm of 1L‐C 6 ‐DNTT in this work appears at the lower right corner of Figure 4a, revealing a balanced overall improvement in these two critical figures of merits which is particularly desired for OFETs to transport high density of current.…”

Section: Resultsmentioning

confidence: 91%

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

Peng

Chen

et al. 2022

Adv Funct Materials

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Organic semiconductor materials are not recognized as a system for high current density applications due to the generally low mobility and high contact resistance. In this work, solution-processed organic molecular monolayer crystals (1L-crystals) as the active layers in field-effect transistors, demonstrating high current density application are utilized. The 1L-crystal-based devices exhibit high intrinsic mobility of 10.9 cm 2 V -1 s -1 and a contact resistance as low as 28 Ω cm, offering unprecedently high width-normalized current density up to 19 µA µm -1 and 1.2 MA cm -2 normalized by cross-section area. Joule heating effects in these high current devices are investigated. At a current density of 7 µA µm -1 , 1L-crystal-based transistor works stably within 1000 consecutive scans. Above this current density, thermal degradation in the current starts to occur and pulsed mode operation can restrict the degradation. The 1L-crystals exhibit superiority in high-current and potential high-frequency applications, which can expand the current boundary of organic semiconductor materials.

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“…Notably, the contact resistance study in the bottom-contact configuration is appealing and has achieved impressive progresses with thermally evaporated organic semiconductors. [1,2,40] The compatibility of solution shearing is limited by the crystal growth on the bottom-contact structure.…”

Section: Contact Resistance and Performance Prediction For Monolayer ...mentioning

confidence: 99%

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

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been shown to be promising in other different applications, including organic logic circuits, memory devices, various sensors, medical applications, and display drivers. [1][2][3][4][6][7][8][9][10][11] Solution processing approaches for the growth of high-quality organic thin films of up to a wafer-scale size have been reported by several groups. [3,12] However, to fully utilize the advantages of highly crystalline organic semiconductors, large-area deposition is not enough; availability of ultrathin films, or even films with the thickness of down to a single molecular layer, is also very important for reducing the access contact resistance. This is necessary for maintaining the high-speed operation (especially in the staggered top-contact/bottom-gate OFETs), while further shrinking the device size dictated by the overall circuit miniaturization. Recently, we have successfully demonstrated a sub-thermionic subthreshold swing and a high-current-density operation of OFETs based on monolayers of a p-type organic semiconductor, 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno [3,2-b]thiophene (C 10 -DNTT), used as the active layer. [13,14] In addition, the impactful studies on the monolayer molecular crystals (MMCs) have been conducted broadly. The excellent optical properties of MMCs enable the highperformance optoelectronics. [15,16] Sensitive to the external stimuli owing to the ultrathin feature, the MMCs provide promising candidate for sensor application. [9,17] Meanwhile, the ultrathin smooth surfaces of MMCs allow the high-quality p-n junction and logic circuits. [18,19] In this communication, we investigate the origin of the low contact resistance observed

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Subthreshold Swing of 59 mV decade⁻¹ in Nanoscale Flexible Ultralow‐Voltage Organic Transistors

Cited by 22 publications

References 79 publications

Nanoscale flexible organic thin-film transistors

Nanoscale flexible organic thin-film transistors

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

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Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow‐Voltage Organic Transistors

Cited by 22 publications

References 79 publications

Nanoscale flexible organic thin-film transistors

Nanoscale flexible organic thin-film transistors

Ultrahigh On‐Current Density of Organic Field‐Effect Transistors Facilitated by Molecular Monolayer Crystals

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

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Subthreshold Swing of 59 mV decade⁻¹ in Nanoscale Flexible Ultralow‐Voltage Organic Transistors