2018
DOI: 10.1109/ted.2018.2863727
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Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

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Cited by 10 publications
(9 citation statements)
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“…6 (a) shows simulated polarization switching current (dP/dt), free charge current (dQ/dt), and voltage drop across FE (V fe ) as a function of time for τ = 4 µs. TNC can be understood as the consequence of incomplete screening of spontaneous polarization charge (depolarization effect) [12], [28]- [30]. Fig.…”
Section: B Tnc In Fe-de Series Capacitorsmentioning
confidence: 99%
“…6 (a) shows simulated polarization switching current (dP/dt), free charge current (dQ/dt), and voltage drop across FE (V fe ) as a function of time for τ = 4 µs. TNC can be understood as the consequence of incomplete screening of spontaneous polarization charge (depolarization effect) [12], [28]- [30]. Fig.…”
Section: B Tnc In Fe-de Series Capacitorsmentioning
confidence: 99%
“…HfO2-based ferroelectric materials should hence be utilized to fabricate CMOS-compatible NC + NEM systems. We investigated the effects of Pr and Ec variations on the NC + NEM system by reviewing published literature [23][24][25][26][27][28][29][30][31][32] that have reported measured Pr and Ec values of the HfO2-based ferroelectric material [ Fig. 2(b)].…”
Section: Simulation Methodsmentioning
confidence: 99%
“…In 1967, Dawon Kahng and Simon Min Sze at Bell Labs first presented a floating-gate metal-oxide-semiconductor field-effect transistor (FG-MOSFET), , which opened up the feasibility of floating-gate memory cells as non-volatile memory. Since the first appearance of the mentioned floating-gate structure, considerable efforts have been made to develop non-volatile memory components based on FG-MOSFETs into memory applications to erasable programmable read-only memory (EPROM), , electrically erasable programmable read-only memory (E2PROM), , and flash memory. , Such FG-MOSFETs are based on a permanent data storage element.…”
Section: Introductionmentioning
confidence: 99%