Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Han, Qinghua; Tromm, Thomas Carl Ulrich; Hoffmann, Michael; Aleksa, Paulus; Schroeder, Uwe; Schubert, J.; Mantl, S.; Zhao, Qing‐Tai

doi:10.1109/ted.2018.2863727

Cited by 10 publications

(9 citation statements)

References 12 publications

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“…6 (a) shows simulated polarization switching current (dP/dt), free charge current (dQ/dt), and voltage drop across FE (V fe ) as a function of time for τ = 4 µs. TNC can be understood as the consequence of incomplete screening of spontaneous polarization charge (depolarization effect) [12], [28]- [30]. Fig.…”

Section: B Tnc In Fe-de Series Capacitorsmentioning

confidence: 99%

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

Jin

Saraya

Hiramoto

et al. 2019

IEEE J. Electron Devices Soc.

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We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted by Landau theory. The dynamic FE model is applied to an FE-dielectric (FE-DE) series capacitor as well as FeFET after calibration and verification by transient measurement of an FE-HfO 2 capacitor. By investigating current through the FE-DE series capacitor and the gate capacitor of FeFET, we find that incomplete screening of spontaneous polarization charge results in transient NC and sub-60 mV/dec SS. Also, it should be noted that, for FeFET, small depletion layer capacitance has an important role to cause strong depolarization effect and thus steep SS. Moreover, reverse drain induced barrier lowering happens even with this FE model. The model presented in this paper provides a reasonable interpretation for the previously reported steep SS of NC FETs. INDEX TERMS Steep subthreshold slope (SS), ferroelectric, negative capacitance (NC).

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Section: B Tnc In Fe-de Series Capacitorsmentioning

confidence: 99%

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

Jin

Saraya

Hiramoto

et al. 2019

IEEE J. Electron Devices Soc.

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“…HfO2-based ferroelectric materials should hence be utilized to fabricate CMOS-compatible NC + NEM systems. We investigated the effects of Pr and Ec variations on the NC + NEM system by reviewing published literature [23][24][25][26][27][28][29][30][31][32] that have reported measured Pr and Ec values of the HfO2-based ferroelectric material [ Fig. 2(b)].…”

Section: Simulation Methodsmentioning

confidence: 99%

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Yoon

Min

Shin

et al. 2020

IEEE J. Electron Devices Soc.

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Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO2-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization (Pr) and coercive field (Ec)] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the Pr and Ec values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by Ec rather than Pr and decrease as Ec increases. The device design guideline with appropriate Pr and Ec values of the HfO2-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices.

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“…In 1967, Dawon Kahng and Simon Min Sze at Bell Labs first presented a floating-gate metal-oxide-semiconductor field-effect transistor (FG-MOSFET), , which opened up the feasibility of floating-gate memory cells as non-volatile memory. Since the first appearance of the mentioned floating-gate structure, considerable efforts have been made to develop non-volatile memory components based on FG-MOSFETs into memory applications to erasable programmable read-only memory (EPROM), , electrically erasable programmable read-only memory (E2PROM), , and flash memory. , Such FG-MOSFETs are based on a permanent data storage element.…”

Section: Introductionmentioning

confidence: 99%

Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures

2023

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A photo memory is a device capable of modulating the state of the memory by light without a separate photodetector. As a result, as two functions can be performed with a single device, the photo memory enables the miniaturization of the image detection system and can be free from the signal delay issue that occurs between different devices through the reduction of the metal routing length. Along this line, we demonstrate an organic photo-memory transistor (PMT) with a small-molecule fluoropolymer-small-molecule-stacked floating-gate heterostructure. The proposed PMT consists of N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide, which has photoresponsive properties to visible light as a floating-gate and 2,7-dioctyl [1]benzothieno [3,2-b] [1]benzothiophene as a channel layer. The proposed PMT device can be erased under light illumination and exhibits a large memory window of approximately 32 V, and the read current (I Read ) shows stable retention characteristics in the programmed and erased states. The erasing operation can be performed under four different wavelengths of light, and multi-level storage is formed according to the light intensity. Furthermore, the PMT device operates the memory only with light without bias because of the photovoltaic effect. Text image mapping depends on whether or not the device is illuminated.

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Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Cited by 10 publications

References 12 publications

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System

Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures

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