Subterahertz Nanosecond Switches Driven by Second-Long Laser Pulses

Kulygin, Maxim L.; Денисов, Г. Г.; Shubin, S. V.; Salahetdinov, S. H.; Новиков, Е. А.

doi:10.1109/tthz.2017.2647879

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…The experiments [7] show the average microwave power transmission coefficient is about -0.4 dB for a wide frequency region. So, the microwave power insertion loss is about 9%.…”

Section: ) T B T J R T L R T Tmentioning

confidence: 92%

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260 GHz CW gyrotron heating substitution with second-long laser pulses in waveguide semiconductor switches

et al. 2017

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“…The experiments [7] show the average microwave power transmission coefficient is about -0.4 dB for a wide frequency region. So, the microwave power insertion loss is about 9%.…”

Section: ) T B T J R T L R T Tmentioning

confidence: 92%

“…So, we can approximate the Joule microwave heating by substituting it with the appropriate laser heating. For infrared lasers [7], the function ( , )…”

Section: ) T B T J R T L R T Tmentioning

confidence: 99%

260 GHz CW gyrotron heating substitution with second-long laser pulses in waveguide semiconductor switches

et al. 2017

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“…But there are still problems of matching the detectors preventing spurious reflection. Up to now there are no high-precision commercial wattmeters for low powers for frequency band of 260 GHz [6].…”

Section: Microwave Power Measurement Problemmentioning

confidence: 99%

Long-Pulsed Modulation Regimes of Subterahertz Nanosecond Waveguide Switches

et al. 2018

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“…1 The fundamental behavior of LDSS systems in generating short pulses has been well characterized by previous experiments at lower RF power levels. 3,4,[6][7][8][9][10][11] Theoretical work investigating the semiconductor response has been completed for both fundamental waveguide and free-space systems. 3,12,13 LDSS systems have been applied to electron spin resonance spectroscopy, notably in 2014 using a 150 W gyrotron at 154 GHz as the RF source.…”

mentioning

confidence: 99%

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

Picard

Schaub

Rosenzweig

et al. 2019

Applied Physics Letters

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A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 ls, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures.

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Subterahertz Nanosecond Switches Driven by Second-Long Laser Pulses

Cited by 13 publications

References 7 publications

260 GHz CW gyrotron heating substitution with second-long laser pulses in waveguide semiconductor switches

260 GHz CW gyrotron heating substitution with second-long laser pulses in waveguide semiconductor switches

Long-Pulsed Modulation Regimes of Subterahertz Nanosecond Waveguide Switches

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron

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