Subsurface cleavage of diamond after high-speed three-dimensional dynamic friction polishing

Zheng, Yuting; Ye, Haitao; Thornton, Rob; Knott, Tom; Ochalski, Tomasz J.; Wang, Jue; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Cumont, Aude; Zhang, Ruoying; Li, Chengming

doi:10.1016/j.diamond.2019.107600

Cited by 40 publications

(25 citation statements)

References 60 publications

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“…3a is likely to be subsurface, which is not surprising as mechanical polishing is known to induce sub-surface damage. 46 There is also an increase in the C-O contribution from ~7% at 90° to ~13% at 30°, as a result of the lower collection angle being more surface sensitive; the O termination is only found at the surface of the BDD. Adventitious carbon signals are minimal.…”

Section: Surface Characterizationmentioning

confidence: 98%

Electron Beam Transparent Boron Doped Diamond Electrodes for Combined Electrochemistry – Transmission Electron Microscopy

Hussein

Wood

Houghton

et al. 2022

Preprint

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The majority of carbon based transmission electron microscopy (TEM) platforms (grids) have a significant sp2 carbon component. Here, we report a top down fabrication technique for producing freestanding, robust, electron beam transparent and conductive sp3 carbon substrates i.e. boron doped diamond (BDD) using an ion milling/polishing process. X-ray photoelectron spectroscopy and electrochemical measurements reveal the sp3 carbon character of the diamond and advantageous electrochemical properties of a BDD electrode are retained during the milling process. TEM diffraction studies show a dominant (110) crystallographic orientation. Compared with conventional carbon TEM films on metal supports, the BDD-TEM electrodes offer superior thermal, mechanical and electrochemical stability properties. For the latter, no carbon loss is observed over a wide electrochemical potential range (up to 1.80 V vs RHE) under prolonged testing times (5 hrs) in acid (comparable with accelerated stress testing protocols). This result also highlights the use of BDD as a corrosion free electrocatalyst TEM support for fundamental studies, and in practical energy conversion applications. High magnification TEM imaging demonstrates resolution of isolated, single atoms on the BDD-TEM electrode during electrodeposition, due to the low background electron scattering of the BDD surface. Given the high thermal conductivity and stability of the BDD-TEM electrodes, in-situ monitoring of thermally induced morphological changes is also possible, shown here for the thermally induced crystallization of amorphous electrodeposited manganese oxide to the electrochemically active gamma-phase.

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Section: Surface Characterizationmentioning

confidence: 98%

Electron Beam Transparent Boron Doped Diamond Electrodes for Combined Electrochemistry – Transmission Electron Microscopy

Hussein

Wood

Houghton

et al. 2022

Preprint

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“…Electronic grade single crystal CVD diamond wafers are scaif polished (a mechanical process where diamond particles are used to abrasively polish the wafer's surface) 45 . Imperfections caused by the polishing process can reach 10 µm below the polished surface 46 . It is hypothesised that this may have altered the electrical characteristics of the diamond resulting in the 4.5 µm thick deadlayer at the top of the detector.…”

Section: Electrical Characterisation and 63 Ni βSpectroscopymentioning

confidence: 99%

Electron spectroscopy with a diamond detector

Bodie

Lioliou

Lefeuvre

et al. 2021

Preprint

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An electronic grade single crystal chemical vapour deposition diamond was investigated as a prototype high temperature spectroscopic electron (β− particle) detector for future space science instruments. The diamond detector was coupled to a custom-built charge-sensitive preamplifier of low noise. A 63Ni radioisotope source (endpoint energy 66 keV) was used to provide a spectrum of β− particles incident on the detector. The operating temperature of the detector/preamplifier assembly was controlled to allow its performance to be investigated between + 100°C and − 20°C, in 20°C steps. Monte Carlo modelling was used to: a) calculate the β− particle spectrum incident on the detector; b) calculate the fraction of β− particle energy deposited into the detector; and c) predict the β− particle spectrum accumulated by the instrument. Comparison between the model and experimental data suggested that there was a 4.5 µm thick recombination region at the front of the detector. The spectrometer was demonstrated to be fully operable at temperatures, T, -20°C ≤ T ≤ 80°C; the results suggested that some form of polarisation phenomenon occurred in the detector at > 80°C. This article presents the first report of a calibrated low energy (⪅ 50 keV) spectroscopic β− particle diamond detector.

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“…(a) SWLI image of the CVD-grown mosaic SCD substrate before PAP; (b) SWLI image of the mosaic SCD substrate after PAP for 3 h; (c) cross-sectional profile of the same point on the mosaic SCD substrate before and after PAP for 3 h; (d) photo of the mosaic SCD substrate before PAP; (e) photo of the mosaic SCD substrate after PAP for position and FWHM of the line are considered to be caused by the imperfection of the crystallinity from several reasons, for instance, impurity such as nitrogen in the mosaic SCD substrate 14 . When dynamic friction polishing (DFP), which has mechanical, thermal, and chemical effects as removal phenomena, was applied to polish SCD, the FWHM of diamond Raman line broadened from 2.7 to 5.49-9.75 cm −1 , indicating that subsurface damage (SSD) was formed on the surface of SCD 15 . When mechanical ultrasonic polishing using a water-based slurry with diamond grit was applied to polish the polycrystalline diamond (PCD), the FWHM of diamond Raman line broadened from 3.8 ± 0.7 to 5.3 ± 0.4 cm −1 .…”

Section: Crystallinity Of the Mosaic Scd (100) Substrate Surface Aftementioning

confidence: 99%

Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

Liu

Sugawara

Yoshitaka

et al. 2020

Sci Rep

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Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 μm/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 μm. The surface roughness measured by both scanning white light interferometer (SWLI) (84-μm square) and atomic force microscope (AFM) (5-μm square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.

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Subsurface cleavage of diamond after high-speed three-dimensional dynamic friction polishing

Cited by 40 publications

References 60 publications

Electron Beam Transparent Boron Doped Diamond Electrodes for Combined Electrochemistry – Transmission Electron Microscopy

Electron Beam Transparent Boron Doped Diamond Electrodes for Combined Electrochemistry – Transmission Electron Microscopy

Electron spectroscopy with a diamond detector

Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

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