Substrate temperature measurement using a commercial band-edge detection system

Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In0.75 Al0.25As quantum wells grown by molecular beam epitaxy

“…Three growth parameters, substrate temperature (T B ), arsenic over pressure (P As 2 ) and Si modulation doping level (N Si ) were adjusted to improve the electron mobility in this structure. T B was measured using a kSA BandiT system [14] and where possible also with an optical pyrometer. T B was set at the start of the graded buffer layer growth and not intentionally further altered during the growth.…”

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

“…The band gap thermometry is sensitive to thin-film interference, which causes the apparent temperature to oscillate [339]. This temperature measurement technique has been used in the IR to measure GaAs and InP [340] and wide-band gap materials such as GaN and SiC [341]. This temperature measurement technique has been used in the IR to measure GaAs and InP [340] and wide-band gap materials such as GaN and SiC [341].…”

Magnetic and Transport Properties of As-grown and Annealed GaMnAs Thick Layers

“…Our GaMnAs layers were grown by molecular beam epitaxy in a mod gen II system under lowest possible As 2partial pressure in order to maintain two-dimensional (2D) growth indicated by streaky Reflection High-Energy Electron Diffraction (RHEED) patterns. The growth temperature T g was measured by a commercial band edge thermometry system (kSA BandiT) 19 . After growth of a 100 nm HT-GaAs buffer layer at 560°C the substrate temperature was lowered during a 10 minutes growth interruption.…”