Substrate temperature dependence of structural, morphological and optical properties of Sn4Sb6S13 thin films deposited by vacuum thermal evaporation

Harizi, Afef; Rabeh, M. Ben; Laatar, Fakher; Akkari, F. Chaffar; Kanzari, M.

doi:10.1016/j.materresbull.2016.02.043

Cited by 18 publications

(4 citation statements)

References 52 publications

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“…In case of the direct bandgap, E g also decreases from 1.84 ± 0.002 to 1.72 ± 0.004 eV. This decrease in the optical bandgap is explained as the enhancement of the crystallinity due to annealing and results in a decrease in structural disorder . The increase in the density of defects leads to an increase in the localized state width, which results in a decrease in the bandgap ( E g ) of the annealed thin films as seen in other studies. , Similarly, the variation in the Tauc parameter with annealing temperature exhibits an increasing order.…”

Section: Resultssupporting

confidence: 69%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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This work focuses on the structural, optical, and morphological modifications in As 20 Ag 10 Te 10 Se 60 quaternary thin films that are ∼800 nm thick upon thermal annealing at different temperatures. The structure is analyzed by Xray diffraction that reveals the phase transformation (amorphous to crystalline) due to annealing. This material's phase transition enables it to be used in memory device applications. The increase in particle size is confirmed by field emission scanning electron microscopy of the surface. The increase in particle size signifies the agglomeration occurs at higher annealing temperatures. The optical transmittance shows a red shift toward a lower photon energy as recorded by the ultraviolet−visible spectrometer. The optical bandgap of the films decreases (1.84 to 1.72 eV), whereas the refractive index increases as calculated from the Swanepoel method. The decrease in the bandgap is attributed to the increases in the localized states. The amorphous to crystalline transition results in a significant increase in the third-order nonlinear susceptibility (from 4.524 × 10 −11 to 14.146 × 10 −11 esu). The nonlinear refractive index is found to increase from 5.385 × 10 −10 to 14.786 × 10 −10 esu upon annealing. The static and high-frequency dielectric constant increases with the increase in oscillator and dispersion energy. The observed changes are explained on the basis of phase transformation and the density of defect states. The enhanced value of the nonlinear refractive index with a reduced optical electronegativity and carrier concentration with annealing is useful for nonlinear optical devices.

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Section: Resultssupporting

confidence: 69%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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“…The alterations in the bandgap are notably impacted by surface morphology, specifically influenced by varying annealing temperatures. 46…”

Section: Resultsmentioning

confidence: 99%

“…The alterations in the bandgap are notably impacted by surface morphology, specifically influenced by varying annealing temperatures. 46 In examining the low absorption regime of the material, the Urbach rule is predominantly employed to investigate its nature. This is because, in this region, the absorption coefficient follows an exponential change with photon energy (hn).…”

Section: Paper Materials Advancesmentioning

confidence: 99%

Temperature dependent Raman and photoresponse studies of Bi₂Te₃ thin films annealed at different temperatures for improved optoelectronic performance

Das,

Senapati,

Alagarasan

et al. 2024

Mater. Adv.

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“…The N c value decreased with annealing temperature because of the change in structure for the coalescence of smaller crystallites. 48 …”

Section: Resultsmentioning

confidence: 99%

Annealing-induced phase transformation in In₁₀Se₇₀Te₂₀ thin films and its structural, optical and morphological changes for optoelectronic applications

Giri,

Priyadarshini,

Alagarasan

et al. 2023

RSC Adv.

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Substrate temperature dependence of structural, morphological and optical properties of Sn4Sb6S13 thin films deposited by vacuum thermal evaporation

Cited by 18 publications

References 52 publications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Temperature dependent Raman and photoresponse studies of Bi₂Te₃ thin films annealed at different temperatures for improved optoelectronic performance

Annealing-induced phase transformation in In₁₀Se₇₀Te₂₀ thin films and its structural, optical and morphological changes for optoelectronic applications

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Substrate temperature dependence of structural, morphological and optical properties of Sn4Sb6S13 thin films deposited by vacuum thermal evaporation

Cited by 18 publications

References 52 publications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

Temperature dependent Raman and photoresponse studies of Bi2Te3 thin films annealed at different temperatures for improved optoelectronic performance

Annealing-induced phase transformation in In10Se70Te20 thin films and its structural, optical and morphological changes for optoelectronic applications

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Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Temperature dependent Raman and photoresponse studies of Bi₂Te₃ thin films annealed at different temperatures for improved optoelectronic performance

Annealing-induced phase transformation in In₁₀Se₇₀Te₂₀ thin films and its structural, optical and morphological changes for optoelectronic applications