Substrate temperature dependence of material, optical, and electronic properties of boron-doped ZnO thin films

Boron–doped WO3 thin films prepared using thermionic vacuum arc technique: physical properties

“…According to the calculated results, an increase in the boron dopant causes a reduction in the intensity of the maximum XRD peaks, replacement of (004) with (222) plane, and sharpening in the maximum emerged peak [1,7,14]. Amongst the various reasons for emerging the secondary phase, the existence of B 2 O 3 in this structure is concluded owing to the large difference in Therefore, increasing the boron amount causes a change in the WO 3 diffraction plane.…”

“…Additionally, a direct dependency between boron dopant and linear attenuation coefficient, mass attenuation coefficient, half value layer, one-tenth value layer, and mean free path results was pronounced. Wong and Lai [14] published a work investigating the temperature dependency of boron-doped ZnO thin films produced via the sputtering technique. Due to the boron activation, the results confirmed the best electrical properties at 400°C in the ZnO:B thin films.…”