Substrate/layer relationships in II–VIs

Oriented [111] ZnSe electrodeposits grown on polycrystalline CdSe substrates

“…Alloy systems where such properties are similar over the binary composition range are particularly attractive, although heterostructures with relatively large deviations in lattice dimensions have manifested surprisingly good behavior. Thus, ZnTe on (1 0 0) GaAs substrate with 7% mismatch ratio makes little difference to less deviated systems, at least for ZnTe layers greater than the critical pseudomorphic thickness, while a twice as much mismatch of 14% between CdTe and GaAs does not prevent a clear orientation of the overlayer with respect to the substrate [3][4][5]. We may note also the successful growth of CdTe crystals on layered NbSe 2 in spite of a mismatch ratio as large as 33% [6].…”

“…Various approaches have been addressed to II-VI epitaxial growth, focused mainly in epitaxy on III-V or nonpolar substrates (such as Si and Al 2 O 3 ), due to the relatively poor quality of II-VI substrates [4,5]. The fabrication of heterojunctions has been dominated by the availability of suitable substrates and the ability of growth, on account of the lattice parameter match as well as the match in band gap energy, electron affinity and thermal expansion coefficient.…”

“…Nearly exact lattice matching (99.74%) of ZnSe can be achieved by epitaxial growth on GaAs, although deposition methods (mainly MBE) actually resort to ZnS 0.06 Se 0.94 ternary, as the critical thickness for pseudomorphic growth of binary ZnSe on GaAs is limited to 100 nm [4]. Electrochemical methods of ZnSe epitaxial growth on GaAs and InP are reported recently [7].…”

Evaluation of crystal structure and photoluminescence for ZnTe epilayers grown on a 2o off‐oriented GaAs (100) substrate

“…This heteroepitaxial structure has a lattice mismatch, differences in the thermal expansion coefficients, and different chemical properties. These aspects may detrimentally affect the crystallinity due to crystal defects generated at the interface [6,7].…”

CdTe Epitaxial Growth by Isothermal Closed Space Configuration

“…Potential applications of II-VI semiconductor compounds in optoelectronics have driven an extensive and successful effort to grow CdTe on various substrates [1]. This semiconductor compound is well recognized as a good solar cell absorber layer.…”