Substrate interactions with suspended and supported monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>: Angle-resolved photoemission spectroscopy

Jin, Wencan; Yeh, Ping-Cheng; Zaki, Nader; Zhang, Datong; Liou, Jonathan T.; Sadowski, Jerzy; Barinov, A.; Yablonskikh, M. V.; Dadap, Jerry I.; Sutter, Peter; Herman, Irving P.; Osgood, Richard M.

doi:10.1103/physrevb.91.121409

Cited by 61 publications

(68 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The label "Bulk lattice parameter" indicates that the experimental bulk unit cell [15] was used, i.e., a = 3.160Å and a = 3.153Å for MoS 2 and WS 2 , respectively. The first strain value is actually the unit cell as relaxed with PBE + D2 while for the second strain value of MoS 2 we increased unit cell to a = 3.26Å as found by Jin et al [16].…”

Section: Figmentioning

confidence: 58%

See 1 more Smart Citation

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

2016

View full text Add to dashboard Cite

The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two successive scattering events-the transport scattering time. In a recent report, we have shown that it is possible to use density functional theory to obtain the band structure of two-dimensional semiconductors in the presence of field effect doping. Here, we report a simple method to extract the scattering time from the experimental conductivity and from the knowledge of the band structure. We apply our approach to monolayers and multilayers of MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 in the presence of a gate. In WS 2 , for which accurate measurements of mobility have been published, we find that the scattering time is inversely proportional to the density of states at the Fermi level. Finally, we show that it is possible to identify the critical doping at which different valleys start to be occupied from the doping dependence of the conductivity.

show abstract

Section: Figmentioning

confidence: 58%

“…A clear kink in the conductivity would thus indicate a relaxation of the lattice as described by Jin et al in Ref. [16].…”

Section: Figmentioning

confidence: 99%

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

2016

View full text Add to dashboard Cite

show abstract

“…It is important to note that this energy resolution is the same as typical momentum microscopy measurements performed with synchrotron radiation and reported to date [8]. Compared to the experimental conditions of the work of Jin et al [8], the off-normal illumination used here enhances the intensity at the point through favorable transition probability from the out-of-plane Mo 4d 2 z orbitals, which is crucial for a direct analysis of the energy dispersion curves [17]. A careful calibration of the k-space scale was performed by measuring with identical PEEM settings as applied for the MoS 2 sample the known reciprocal lattice distances of a freshly prepared Cu(111) single-crystal surface.…”

mentioning

confidence: 70%

Free-standing electronic character of monolayerMoS2in van der Waals epitaxy

et al. 2016

View full text Add to dashboard Cite

We have evaluated as-grown MoS 2 crystals, epitaxially grown on a monocrystalline sapphire by chemical vapor deposition (CVD), with direct electronic band-structure measurements by energy-filtered k-space photoelectron emission microscopy performed with a conventional laboratory vacuum ultraviolet He I light source under off-normal illumination. The valence states of the epitaxial MoS 2 were mapped in momentum space down to 7 eV below the Fermi level. Despite the high nucleation density within the imaged area, the CVD MoS 2 possesses an electronic structure similar to the free-standing monolayer MoS 2 single crystal, and it exhibits hole effective masses of 2.41 ± 0.05 m 0 , and 0.81 ± 0.05 m 0 , respectively, at and K high-symmetry points that are consistent with the van der Waals epitaxial growth mechanism. This demonstrates the excellent ability of the MoS 2 CVD on sapphire to yield a highly aligned growth of well-stitched grains through epitaxial registry with a strongly preferred crystallographic orientation.

show abstract

“…While the reason for this inconsistency is not clear, note that these DFT calculations mentioned above assumed commensurability between Gr and MoS 2 , which may not exactly be the case in experiment. Also, we note the presence of the n-doped Si substrate in our experiment which is not taken into account in either of the theoretical reports; the effect of the Si substrate on MoS 2 , however, is expected to be weak based on a previous report [11,13].…”

mentioning

confidence: 87%

“…The weak electron coupling at the interface of vdW heterostructures offers the possibility of combining the intrinsic electronic properties of the individual 2D layers. In particular, Gr/MoS 2 vdW heterostructures are remarkable because of the high carrier mobility [9] and broadband absorption [10] of graphene, as well as the direct bandgap [11][12][13] and extremely strong light-matter interactions [14] of monolayer MoS 2 . The combination of these unusual characteristics has led to potential applications in field-effect transistor devices [15,16], energy harvesting materials [17,18], and memory cells [19,20].…”

mentioning

confidence: 99%

Tuning the electronic structure of monolayer graphene/MoS2van der Waals heterostructures via interlayer twist

et al. 2015

Self Cite

View full text Add to dashboard Cite

Substrate interactions with suspended and supported monolayerMoS2: Angle-resolved photoemission spectroscopy

Cited by 61 publications

References 39 publications

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

Free-standing electronic character of monolayerMoS2in van der Waals epitaxy

Tuning the electronic structure of monolayer graphene/MoS2van der Waals heterostructures via interlayer twist

Contact Info

Product

Resources

About