Substrate Integrated Waveguide SPST Switch with Single SMD PIN Diode

Buiculescu, Valentin; Nicoloiu, Alexandra

doi:10.23919/eumc.2018.8541658

Cited by 4 publications

(5 citation statements)

References 11 publications

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“…From the admittance parameters, the S-parameters can be found as in ( 14) and (15), where (Y 0 ) is the port admittance…”

Section: B Routing Switch Circuitmentioning

confidence: 99%

“…For good isolation, (15) has to be minimized. This can be achieved by minimizing the admittance parameter (Y 13 ).…”

Section: B Routing Switch Circuitmentioning

confidence: 99%

“…Substrate integrated waveguide (SIW) technology paved the way for implementing easily-integrable compact-size microwave devices with high unloaded quality factor and high-power handling capability [11], [12], [13]. Moreover, a wide variety of SIW switching topologies have been studied and implemented, such as single-pole, single-throw (SPST) [14], [15], [16], single-pole, double-throw (SPDT) [16], [17], [18], and single-pole, multiple-throw (SPMT) switches [19]. Despite the state-of-the-art performance of the previously-stated switching topologies, they all have low switching speeds.…”

mentioning

confidence: 99%

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Novel High-Performance SIW Cavity-Based Switching Structures

El-Gendy,

Khater,

Abdelaziem

et al. 2024

IEEE Trans. Microwave Theory Techn.

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In this article, novel architectures for high-speed substrate integrated waveguide (SIW) filtering switches with high-power handling are presented. A four-port filtering doublepole, double-throw (DPDT) switch and a three-port filtering routing switch are demonstrated as a proof-of-concept. For both switches, the structure consists of a main switching circular cavity with concentric posts. These posts enable the excitation of multiple resonant modes. The resonant modes are aligned in frequency using loading capacitances. p-i-n-diodes are used to short loading posts. Consequently, the generated fields interfere constructively and destructively at the output ports. Concept-proving structures are designed, implemented, and measured. For the SIW-DPDT switch, a measured insertion loss and isolation of 2.95 and 26 dB are achieved, respectively, at 7.4 GHz. Furthermore, a 2.98 and 30 dB measured insertion loss and isolation are obtained for the SIW-routing switch, respectively, at 7.7 GHz. The measured insertion losses include the losses of the filtering cavities. The proposed structures share the same switching technique. As a result, the power handling measurements are performed only for the routing switch, which is measured to handle 40 dBm of input power. Also, the employed switching technique is demonstrated to exhibit a switching speed of less than 80 ns.

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“…From the admittance parameters, the S-parameters can be found as in ( 14) and (15), where (Y 0 ) is the port admittance…”

Section: B Routing Switch Circuitmentioning

confidence: 99%

“…For good isolation, (15) has to be minimized. This can be achieved by minimizing the admittance parameter (Y 13 ).…”

Section: B Routing Switch Circuitmentioning

confidence: 99%

mentioning

confidence: 99%

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Novel High-Performance SIW Cavity-Based Switching Structures

El-Gendy,

Khater,

Abdelaziem

et al. 2024

IEEE Trans. Microwave Theory Techn.

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“…Below we address the design of low-loss mmWave SIW switches. Previously reported designs employ mechanical SIW switches [4], the ferrite-loaded switches [5], PIN diode-loaded half-mode [6] and slotted SIW switches [7] - [9]. The slotbased concept solves the problem of DC and mmWave parts decoupling.…”

Section: Introductionmentioning

confidence: 99%

“…However, it leads to insertion loss increase due to the parasitic slot radiation and reactances of PIN diodes and bonding wires [7]. Multilayer structures [8], [9] prevent the interference with control circuitry but require transitions between the layers, resulting in expensive designs and additional losses, especially at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

Low-loss K-band Photoconductive Switches in SIW Technology

Shepeleva

Makurin

Lukyanov

et al. 2021

2020 50th European Microwave Conference (EuMC)

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A design approach for mmWave switches in substrate integrated waveguide (SIW) technology is demonstrated. The switch is based on a photoconductive element (PE) which represents a piece of an intrinsic silicon wafer with light modulated conductivity. Using both dielectric (high-resistivity) and conductive states of the PE, we can design a low-loss mmWave switching element. Owing to the light actuation, the control circuitry of the photoconductive switch (PS) is electrically separated from the highfrequency elements of the device. This solves the bottleneck of conventional mmWave switches based on PIN diodes, MOSFETs, MEMS, etc., which are bulky and lossy due to decoupling filters and matching elements of control and biasing circuits. The proposed approach is generic and can be applied to many mmWave applications within 10-100 GHz such as 5G, WiGig, automotive radars, and others.

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