Substrate free Defect-rich one dimensional ZnO nanostructures

Katiyar, Anu; Kumar, Nishant; Shukla, R. K.; Srivastava, Anchal

doi:10.1016/j.matpr.2021.05.431

Cited by 4 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The past published reports on PDs indicate that in most of the PDs, GaN and silicon have been used as absorbing layers. – However, due to the blurring of optical signals between neighboring pixels, cross-talk of optical signals, low band gap, poor efficiency, and high cost of these materials, researchers take interest in other semiconductors like ZnS, CdS, V 2 O 5 , CeO 2 , CuO, ZnO, etc. ,– Out of these semiconducting materials, ZnO is the most preferable material for making PDs because of its unique properties like wide direct band gap (∼3.37 eV), large exciton energy (60 meV), nontoxicity, transparency, and thermal stability. – The most interesting property is its large excitonic binding energy of 60 meV at room temperature, which makes ZnO an efficient light emitter. – Also, the crystal growth of ZnO is easier than that in most semiconductors. Due to these unique desirable properties, ZnO can be essentially used as a high-response photodetector (PD) which could be fabricated with both Schottky and ohmic contacts .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

View full text Add to dashboard Cite

Photodetection plays an essential role in the visiblelight zone and is important in modern science and technology owing to its potential applications in various fields. Fabrication of a stable photodetector remains a challenge for researchers. We demonstrated a high-response/recovery and self-powered undoped ZnO (UZO) and Cu-doped ZnO (CZO) thin film-based visible-light photodetector fabricated on a cost-effective Si substrate using reactive cosputtering. The structural, morphological, and optical properties of CZO and UZO thin films have been examined using X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and photoluminescence spectroscopy. The results of the CZO/n-Si photodetector compared with those of the undoped ZnO (UZO)/n-Si photodetector show that the CZO/n-Si exhibits a higher on/off ratio, responsivity, and detectivity than UZO/n-Si. Also, the CZO/ n-Si photodetector shows high stability and reproducibility over 20 cycles after 180 days. A relative study of CZO/n-Si-and UZO/n-Si-based photodetectors reveals the enhanced performance of the CZO/n-Si photodetector, which has a high on/off ratio of ∼300 with a high specific detectivity of 2.8 × 10 10 Jones for 75 mW visible light. The prepared self-powered CZO/n-Si/Ag thin film-based visible-light photodetector paves the way for the development of high-performance photodetector designs.

show abstract