Substrate dependent growth of microcrystalline silicon

Bailly, Mark; Carpenter, Joseph A.; Holman, Zachary C.; Bowden, Stuart

doi:10.1109/pvsc.2014.6925130

Cited by 7 publications

(9 citation statements)

References 10 publications

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“…For the mc-Si:H layers, these values were 30 W, 3.5 Torr, 15 sccm of silane, and 2500 sccm of hydrogen. With these flow rates, the hydrogen dilution ratiodefined here as R ¼ [H 2 ]/[SiH 4 ]was 5 for a-Si:H and 167 for mc-Si:H, consistent with reports by others [18,19].…”

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confidence: 90%

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Substrate‐independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy

Carpenter

Bailly

Boley³

et al. 2017

Physica Status Solidi (b)

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Surface‐sensitive UV Raman spectroscopy is used to analyze the crystallinity of silicon films less than 20 nm thick directly on silicon wafers. The 325‐nm excitation has a Raman detection thickness of only 13 nm within the silicon film, thus eliminating signal from the substrate. We demonstrate measured crystallinities of microcrystalline silicon thin films that are consistent with the microstructure observed in transmission electron microscopy. Comparison is also made to ellipsometry, which is less able to accurately determine crystallinity than UV Raman spectroscopy. The UV Raman approach is particularly useful for layers grown on substrates of the same material but with different microstructure, and can be extended to non‐silicon materials.

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confidence: 90%

“…The a‐Si:H and μc‐Si:H films were deposited in a parallel‐plate PECVD tool operating at radio frequency (13.56 MHz) . All depositions were conducted at 250 °C and the time was varied to achieve layers between 0.3 and 84 nm thick.…”

Section: Methodsmentioning

confidence: 99%

Substrate‐independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy

Carpenter

Bailly

Boley³

et al. 2017

Physica Status Solidi (b)

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“…The cell with an oxygen free FSF ( f CO2 = 0) shows a very low FF and V oc and does not follow the overall trend as given by the material properties of the FSF film deposited on a glass substrate. We attribute this to the pronounced amorphous incubation layer of μc‐Si, which occurs on a‐Si:H covered substrates as reported in . As the thickness of the μc‐Si:H FSF presumably is below the thickness of its amorphous incubation layer, the 20 nm μc‐Si:H FSF might be fully amorphous.…”

Section: Discussionmentioning

confidence: 51%

“…A previous work has shown that an oxygen free FSF ( f CO2 = 0) grown on a‐SiO x :H instead of a‐Si:H provides a high FF as well as a high V oc in SHJ solar cells . This discrepancy supports the assumption of an extended amorphous incubation layer in the case of the μc‐Si:H/a‐Si:H stack, since silicon oxide substrates are known to improve the crystalline growth of μc‐Si:H and to reduce the incubation phase .…”

Section: Discussionmentioning

confidence: 68%

Light management in planar silicon heterojunction solar cells via nanocrystalline silicon oxide films and nano‐imprint textures

Richter

Lentz

Meier

et al. 2016

Physica Status Solidi (a)

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In order to increase the efficiency of high performance silicon heterojunction solar cells even further, it is paramount to increase the photoelectric current by enhancing the amount of light being captured within the absorber. Therefore, to reduce the parasitic absorption in the other layers, optoelectronically favorable hydrogenated nanocrystalline silicon oxide films can substitute the commonly used hydrogenated amorphous silicon layers. In this work, we systematically investigate the combination of hydrogenated nanocrystalline silicon oxide and front side nano‐imprint textures as anti‐reflection layers in silicon heterojunction solar cells. Ultimately, we were able to tune the parasitic absorption via variation of the front surface field layer and enhance the short‐circuit current of the planar solar cells by about 2 mA cm−2 due to a random silicon pyramid textured imprint layer. A maximum active area efficiency of 20.4% was achieved with a short‐circuit current of 37.7 mA cm−2.

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“…Silicon oxide (SiO 2 ) can further reduce undesired parasitic absorption, when used instead of (i)a-Si:H, by acting both as passivation layer [4] and as a better substrate for enhanced nucleation in combination with nc-Si:H material, which is known to have superior optoelectronic properties compared to a-Si:H [5][6][7][8]. SiO 2 layer have to be ultra-thin (< 2 nm) to permit carrier transport by tunneling and as close as possible to stoichiometry [9].…”

Section: Introductionmentioning

confidence: 99%

Optimization of PECVD process for ultra-thin tunnel SiO<inf>x</inf> film as passivation layer for silicon heterojunction solar cells

Mazzarella

Kolb

Kirner

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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Substrate dependent growth of microcrystalline silicon

Cited by 7 publications

References 10 publications

Substrate‐independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy

Substrate‐independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy

Light management in planar silicon heterojunction solar cells via nanocrystalline silicon oxide films and nano‐imprint textures

Optimization of PECVD process for ultra-thin tunnel SiO<inf>x</inf> film as passivation layer for silicon heterojunction solar cells

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