Substrate bias effect on Al–Si and Al–Ge thin film structure

Horie, R.; Yasui, Norio; Ōhashi, Y.; Den, Tohru

doi:10.1016/j.tsf.2008.03.036

Cited by 7 publications

(2 citation statements)

References 14 publications

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“…It strongly grew during the 1960s and the 1970s with the development of new synthesis techniques (i.e., ultrarapid cooling, mechanical-alloying, plasma spray coating, and so on), which have opened the route to new metastable materials with new applications. − Al–Ge is an eutectic metal–semiconductor binary system under thermodynamic equilibrium conditions, standing among the most explored systems due to its similarity with the Al–Si system and to the technological interest of aluminum-based alloys. In addition, the existence of several metastable phases in crystalline and amorphous forms is of interest not only from a fundamental point of view − but also for several fields of application. For example, Al–Ge binary system compounds have been considered as low temperature lead free eutectic soldering/brazing alloys for replacing Au or Au–Si solders in microelectronic devices, , as bonding in electromechanical applications, , as solar absorbers, or for their superconducting properties .…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor

et al. 2017

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We report for the first time the full crystal structure, the electronic structure, the lattice dynamics, and the elastic constants of metastable monoclinic AlGe. In addition to ultrarapid cooling techniques such as melt spinning, we show the possibility of obtaining monoclinic AlGe by water-quenching in a quartz tube. Monoclinic AlGe and rhombohedral AlGe are competing phases with similar stability since they both begin to decompose above 230 °C. The crystal structure and electronic bonding of monoclinic AlGe are similar to those of ZnSb and comply with its 3.5 valence electrons per atom: besides classical two electron-two center Al-Ge and Ge-Ge covalent bonds, AlGe parallelogram rings are formed by uncommon multicenter bonds. Monoclinic AlGe could be used in various applications since it is found theoretically to be an electron-poor semiconductor with a narrow indirect energy bandgap of about 0.5 eV. The lattice dynamics calculations show the presence of low energy optical phonons, which should lead to a low thermal conductivity.

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Section: Introductionmentioning

confidence: 99%

Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor

et al. 2017

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“…The thin solid films can be both crystalline and amorphous. The formation of amorphous films is a common phenomenon for some metal oxide, such as amorphous TiO 2 films [1], semiconductor and its alloys, such as amorphous Si films [2] and Al-Si, Al-Ge thin films [3], but unusual for pure metals such as Ag and Au. Under certain conditions, however, the Ag or Pd solids precipitated from solution are not crystalline but amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Au Thin Films and their <i>In Situ</i> Crystallized Nanoparticles

Xiao

Sun

Ding

et al. 2011

AMR

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Two-phase thin solid films consisted of Au nanoparticles imbedded in an amorphous matrix were prepared via a series of galvanic replacement reactions between chloroauric acid solution and reducing metals. The Au nanoparticles were in situ crystallized from the amorphous films rather than precipitated from solution directly. Amorphous films with partly crystallized Au nanoparticles only existed stably in dilute chloroauric acid solution. The higher concentration of chloroauric acid evidently promoted the strain-induced crystallization process and accelerated the crystallization of amorphous films into Au nanoparticles with many stacking faults, twins and dislocations. The coexistence of amorphous and crystalline Au nanoparticles makes it possible to synthesize two-phase nanostructured films.

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