Substrate and epitaxial issues for SiC power devices

Spencer, Michael G.; Palmour, John W.; Carter, C.

doi:10.1109/16.998608

Cited by 14 publications

(3 citation statements)

References 39 publications

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“…1) defined N as a total impurity density. They used experimental data for μ RT depending on n e in 4H-SiC epi-layers [1,[5][6][7]18] and in 4H-SiC Lely crystals [10], as well as μ RT depending on N D -N A in 4H-SiC epi-layers [3,8,11] to extract fitting parameters in Eq. 1.…”

Section: Resultsmentioning

confidence: 99%

“…3, the implantation was performed at RT in five steps with individual implantation energies and fluencies. The samples were subjected to post-implantation annealing in argon ambient at temperatures between 1500 and 1700 °C for 30 min resulting in n e ranging from 2.8×10 18 to 4×10 18 cm -3 in different samples. Surface protection by graphite capping layer was employed to prevent surface deterioration [13].…”

Section: Methodsmentioning

confidence: 99%

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On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

Vasilevskiy

Roy

Wood

et al. 2017

MSF

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Low field electron mobility in heavily nitrogen doped 4H-SiC epitaxial layers as well as in the regions formed by ion implantation was extracted from Hall and van der Pauw measurements. The measurements were done at room temperature in 4H-SiC samples with carrier concentrations ranged from 2.8×1018 to 2.3×1019 cm-3. Fitting parameters in empirical expression given by Caughey and Thomas for room temperature low field electron mobility depending on carrier concentration in 4H-SiC were extracted.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

Vasilevskiy

Roy

Wood

et al. 2017

MSF

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“…This reduction can be attributed to the dependence of surface charge, interface trapped charges and change of surface potential at higher temperature. In SiC MOSFETs, the overall on-resistance of the transistor is the sum of the MOSFET channel, vertical JFET region, and the drift region [11].…”

Section: Sic Materials Challengesmentioning

confidence: 99%

SiC Power MOSFET modeling challenges

Pratap

Singh

Agarwal

2012

2012 Students Conference on Engineering and Systems

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SiC Power MOSFETs show a huge potential for high voltage, high temperature, high-power and high-frequency power electronic applications. Recently SiC MOSFETs were being made available in market. It is important to have spice models to validate the circuit using such high performance devices because it is not always possible to put the real hardware in place even without validating the circuit biasing. In this paper we have tried to bring out the challenges involved in coming up with a valid, industrially useful spice model for SiC MOSFETs. Index Terms-SiC(Silicon Carbide), Power MOSFET, Spice Model

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III-N Materials, and the State-of-the-Art of Devices and Circuits

Gallium Nitride Electronics

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Substrate and epitaxial issues for SiC power devices

Cited by 14 publications

References 39 publications

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC

SiC Power MOSFET modeling challenges

III-N Materials, and the State-of-the-Art of Devices and Circuits

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