Substitutional doped GeSe: tunable oxidative states with strain engineering

Abstract

Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore...

Mutual modulationviacharge transfer and unpaired electrons of catalytic sites for the superior intrinsic activity of N2reduction: from high-throughput computation assisted with a machine learning perspective

“…Ever since the discovery of graphene, two-dimensional (2D) layered materials have attracted much attention due to their unique mechanical, electronic and optical properties. [32][33][34][35] Among them, molybdenum disulde (MoS 2 ) is a promising catalyst for HER and NRR. 16,36,37 Recently, boron, as a low-valent element, has been exploited for NRR [38][39][40][41] because of its available empty orbitals that can accommodate lone-pair electrons from N 2 .…”

“…Ever since the discovery of graphene, two-dimensional (2D) layered materials have attracted much attention due to their unique mechanical, electronic and optical properties [32][33][34][35] . Amongst them, molybdenum disulfide (MoS 2 ) is a promising catalyst for HER and NRR, etc 16,36,37 .…”

Fast Intercalation of Lithium in Semi‐Metallic γ‐GeSe Nanosheet: A New Group‐IV Monochalcogenide for Lithium‐Ion Battery Application

“…Recently, the family of group-IV monochalcogenides MX (M=Ge, Sn, X=S, Se, Te) with unique "puckered" layered structures has been layered materials in vogue. [21][22][23][24][25][26][27][28][29][30] The group-IV monochalcogenides are usually analogues of phosphorene and have gained extensive research interests as ferroelectric [31][32][33][34] and thermoelectric [35][36][37] materials, as well as in photocatalysis [38,39] and electrocatalysis. [40,41] The αand β-phases with orthorhombic crystal lattice are the normal polymorphs of group-IV monochalcogenides, which are most well-studied.…”

“…Recently, the family of group‐IV monochalcogenides MX (M=Ge, Sn, X=S, Se, Te) with unique “puckered” layered structures has been layered materials in vogue [21–30] . The group‐IV monochalcogenides are usually analogues of phosphorene and have gained extensive research interests as ferroelectric [31–34] and thermoelectric [35–37] materials, as well as in photocatalysis [38,39] and electrocatalysis [40,41] .…”

Electric potential and energy band in ZnO nanofiber tuned by local mechanical loading

“…As nanostructures remain integrity when subject to a larger strain than their bulk counterparts, the strain engineering was treated as an effective way to improve the performance of nanostructure devices [7] . Normally, strain is introduced by lattice mismatch [8] , impurity doping [9] , functional wrapping [10] as well as direct mechanical applications [5,11] in strain engineering. Thanks to strain engineering, tremendous achievements have been made, such as the turn of indirect band gap to direct band gap [12] , band gap opening [13] , enhancement of charge carrier mobility [14] , tune of the effective mass of carriers [15] , and transition of semiconductors to conductors [16] .…”