Substitution site effect on structural and dielectric properties of La–Bi modified PZT

Goel, Puja; Yadav, K. L.

doi:10.1007/s10853-006-0416-x

Cited by 42 publications

(14 citation statements)

References 30 publications

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“…Tailoring of the material chemistry in the form of solid-solutions, heterovalent and isovalent doping has been extensively reported in the literature to tune the response of any functional material [97,98,99,100,101,102]. The same has also been proposed for enhancing the energy storage characteristics in various AFE materials, where doping has been proven highly effective.…”

Section: Enhancing Energy Storage Capacity In Anti-ferroelectric Mmentioning

confidence: 99%

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

et al. 2015

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With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE) display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

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Section: Enhancing Energy Storage Capacity In Anti-ferroelectric Mmentioning

confidence: 99%

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

et al. 2015

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“…In this formula La +3 ions goes to the A-site and vacancies are created on the B-site to maintain change balance. The influence of soft doping (trivalent Bi [8][9][10][11][12][13]) and hard doping (acceptors Mn and Sb [14][15][16]) in PLZT have been reported to have high electromechanical properties. However, the relationship between morphological and electrical properties with reference to these combinatorial ceramic compositions with hard (acceptor Mn and Sb B-site) and soft (trivalent Bi A-site) doping in PLZT has not been addressed.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Dielectric Properties of Bi Substituted PLZMST Ceramics

Menasra¹,

Necira²,

Bouneb³

et al. 2013

MSA

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Bismuth (Bi) and lanthanum (La) doped lead manganese antimoine zirconate titanate (PZMST) ceramic powders have been synthesized by high temperature solid-state reaction method. Preliminary X-ray structural analysis of the compounds shows the formation of tetragonal structure. Scanning electron micrographs (SEM) shows a uniform grain distribution and grain size of the order of ~2.28 μm. Detailed dielectric studies of the Pb₀_.₉₅(La_1-_z Bi_z)₀_.05[(Zr₀_.6Ti₀_.4)₀_.95(Mn_1/3Sb_2/3)₀_.05]O₃ samples as a function of the temperature (from 25°C to 450°C) at frequency 1 kHz suggest that the compounds undergo a diffuse phase transition. The transition temperature shifts increase with increasing the Bi ratio. Diffusivity (γ

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“…with l the used wavelength, q the Bragg angle for the most intense peak and b the half height width of this peak. For the Williamson-Hall method, the widening of the X-ray line (b) equal to the expansion caused by the deformation of the lattice (b strain ) present in the material 35 plus the contribution of crystallite size (b size ).…”

Section: Resultsmentioning

confidence: 99%