Substitution of Zn in Earth‐Abundant Cu2ZnSn(S,Se)4 based thin film solar cells – A status review

Kumar, M. Suresh; Madhusudanan, Sreejith P.; Batabyal, Sudip Kumar

doi:10.1016/j.solmat.2018.05.003

Cited by 101 publications

(36 citation statements)

References 77 publications

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“…CFTS thin films have been fabricated by various methods, such as solvothermal [142], hot injection method [141], molecular method [156], spray pyrolysis [157], and mostly focused on its magnetic properties. Even though CFTS exhibit a band gap between 1-1.5 eV and high absorption coefficient (10 4 cm −1 ) in the visible spectrum range [158], there are not many reported CFTS photovoltaic devices in literature. Efficiency of 0.07% is achieved with glass/Mo/CFTS/ CdS/i-ZnO/AZO by using RF magnetron sputtering to deposit the absorber [159].…”

Section: Iron (Fe)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu 2 ZnSn(S,Se) 4 matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest state-of-the-art of possible extrinsic elements is presented in the order of groups of the periodic table. The highest reported solar cell efficiencies for each extrinsic dopant are tabulated at the end. Several dopants like alkali elements and substitutional alloying with Ag, Cd or Ge have been shown to improve the device performance of kesterite solar cells as compared to the nominally undoped references, although it is often difficult to differentiate between pure electronic effects and other possible influences such as changes in the crystallization path, deviations in matrix composition and presence of alkali dopants coming from the substrates. The review is concluded with a suggestion to intensify efforts for identifying intrinsic defects that negatively affect electronic properties of the kesterite absorbers, and, if identified, to test extrinsic strategies that may compensate these defects. Characterization techniques must be developed and widely used to reliably access semiconductor absorber metrics such as the quasi-Fermi level splitting, defect concentration and their energetic position, and carrier lifetime in order to assist in search for effective doping/alloying strategies.

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Section: Iron (Fe)mentioning

confidence: 99%

Doping and alloying of kesterites

et al. 2019

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“…This cations disorder into the kesterite crystal lattice could be the reason for a poor performance, showing a reduction in the photovoltage and fill factor. Recently, improvements in open circuit voltage have been obtained by reducing the number of antisite defects via cation substitution with Cd, Mn, Ba, Fe, Ni and Co, demonstrating that a better control of stoichiometry is needed for obtaining high efficiencies [67]. Moreover, the most efficient CZTSSe-based devices are processed by reacting precursors at atmospheric pressure; these methods are effective in reducing the re-evaporation of high-vapor pressure compounds, such as SnSe, Cu 2 SnSe 3 , Zn, Se and S, and in providing good control of the CZTSSe stoichiometry.…”

Section: Cu 2 Znsn(s Se) 4 -(Cztsse)mentioning

confidence: 99%

The History of Photovoltaics with Emphasis on CdTe Solar Cells and Modules

2020

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Among thin-film photovoltaic technology, cadmium telluride (CdTe) has achieved a truly impressive development that can commercially compete with silicon, which is still the king of the market. Solar cells made on a laboratory scale have reached efficiencies close to 22%, while modules made with fully automated in-line machines show efficiencies above 18%. This success represents the result of over 40 years of research, which led to effective and consolidated production processes. Based on a large literature survey on photovoltaics and on the results of research developed in our laboratories, we present the fabrication processes of both CdTe polycrystalline thin-film solar cells and photovoltaic modules. The most common substrates, the constituent layers, their interaction, the interfaces and the different “tricks” necessary to obtain highly efficient devices will be analyzed. A realistic industrial production process will be analytically described. Moreover, environmental aspects, end-of-life recycling and the life cycle assessment of CdTe-based modules will be deepened and discussed.

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“…Since then no significant improvement in the PCE has been seen for more than four years and experiencing stagnation. The main limiting factors of PCE in CZTSSe devices are vacancy defects, antisite defects, and interstitial defects causing large open circuit voltage (V oc ) deficit [4]. The similar ionic radii and environment among Cu and Zn in the kesterite CZTS structure are the focal reason for the formation of undesirable copper-on-zinc (Cu Zn ) and zinc-on-copper (Zn Cu ) antisite defects [4].…”

Section: Introductionmentioning

confidence: 99%

“…The main limiting factors of PCE in CZTSSe devices are vacancy defects, antisite defects, and interstitial defects causing large open circuit voltage (V oc ) deficit [4]. The similar ionic radii and environment among Cu and Zn in the kesterite CZTS structure are the focal reason for the formation of undesirable copper-on-zinc (Cu Zn ) and zinc-on-copper (Zn Cu ) antisite defects [4]. Cu 2 CdSnS 4 (CCTS) belongs to the copper-based quaternary Cu 2 -II-IV-VI 4 family analogous to CZTS showing high optical absorption coefficient exhibits tetragonal stannite structure with a suitable direct band gap of about 1.4 eV matching well with the solar spectrum [5].…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of photodiode from p-Cu₂CdSnS₄/n-Bi₂S₃ heterojunction

Kumar

Madhusudanan

Mohanta

et al. 2020

Mater. Res. Express

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Here we investigated the photo response behaviour of p-Cu 2 CdSnS 4 (p-CCTS)/n-Bi 2 S 3 heterojunction photodiode. The solution processed CCTS films without any high temperature sulfurization demonstrated the photo response behaviour, suggesting the material is well suited for low temperature processed photovoltaic applications. A CCTS film was deposited on an ITO coated glass substrate using simple sol-gel based spin coating method. Current-voltage (I-V) characteristic of the p-CCTS/n-Bi 2 S 3 heterojunction photodiode showed a good rectifying behaviour indicating better junction formation between CCTS and Bi 2 S 3 layers. The obtained photocurrent is 4 times higher than that of the dark current. The I-V curves are asymmetric with respect to voltages and the photocurrent in the positive bias region is considerably higher than the corresponding values in the negative bias region. With these results, it is concluded that the CdS material in traditional thin film PV devices can be replaced with Bi 2 S 3 for better transportation of charge carriers in the PN-junction.

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Substitution of Zn in Earth‐Abundant Cu2ZnSn(S,Se)4 based thin film solar cells – A status review

Cited by 101 publications

References 77 publications

Doping and alloying of kesterites

Doping and alloying of kesterites

The History of Photovoltaics with Emphasis on CdTe Solar Cells and Modules

Development and characterization of photodiode from p-Cu₂CdSnS₄/n-Bi₂S₃ heterojunction

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Substitution of Zn in Earth‐Abundant Cu2ZnSn(S,Se)4 based thin film solar cells – A status review

Cited by 101 publications

References 77 publications

Doping and alloying of kesterites

Doping and alloying of kesterites

The History of Photovoltaics with Emphasis on CdTe Solar Cells and Modules

Development and characterization of photodiode from p-Cu2CdSnS4/n-Bi2S3 heterojunction

Contact Info

Product

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About

Development and characterization of photodiode from p-Cu₂CdSnS₄/n-Bi₂S₃ heterojunction