The importance of the alkali aluminate, fl-A12Os, as a solid electrolyte in secondary batteries and other electrochemical applications is well known (10). The gross features of the ~-A1203 structure that allow the high mobility of the alkali ions are clearly recognized, and detailed mechanisms of the conduction process have been proposed (2-7). It is recognized that neither Na +, A1 + + +, nor perhaps even oxygen itself is specifically required for the high conduction in this structure, but rather an open, highly defective layer in the lattice is necessary through which an ion species can move with a low activation energy via a vacancy mechanism. In beta-alumina the requisite structure must result in part from charge compensation by Na + and vacancies when the Mg + + of spinel (MgAleO4) is replaced by A1 + + +, but the process is complex and not completely understood.There is a very large number of other crystals with the spinel structure, and the process of fast ion conduction should be common to many of them if the same charge compensating substitutions can be made. In 1951, Foster and Stumpf (8) described the extensive isomorphism between the alumina and gallia systems and, in particular, prepared the gallium analogs of sodium and potassium beta-alumina. 1 Fast ion conduction has recently been demonstrated in this material (9-11), and it is apparent that it has the same highly defective structure as ~-A1208.In spite of the similarities between ~-A12Q and its gallium analog, subtle differences are expected which can be exploited to increase our understanding of this interesting class of materials. For example, because Ga + + + is slightly larger than A1 + + +, the slot width--the distance across the conducting plane--is slightly greater in the gallium analog. This should result in higher conductivity for the gallium compound, especially for the larger alkali ions. The uptake of water in the conduction plane, which has a profound effect on the stability and conductivity of the beta-aluminas (12), is also likely to be quantitatively and perhaps qualitatively different in the gallium analogs. Finally, subtle differences between the A120~-Na20 and Ga203-Na20 systems should make it possible to elucidate features of these complex phase diagrams by providing an alternative system to study.It is desirable to employ high quality monocrystals in a study of the properties of a new material. The present paper describes progress toward producing such crystals of the gallium analog of ~-A1208 by a flux growth method. With growth parameters thus determined, it should also be possible to prepare monocrystalline layers by a liquid-phase epitaxial technique if a suitable substrate can be found. * Electrochemical Society Active Member.