Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2–xVxTe3

Dyck, Jeffrey S.; Ahilan, K.; Aronson, M. C.; Uher, Ctirad; Lošťák, P.

doi:10.1002/pssb.200541287

Cited by 8 publications

(7 citation statements)

References 21 publications

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“…The observed substantial pressure effect on Θ, dΘ/dP = −0.75 K/kbar, correlates both in sign and magnitude with the reported in Ref. [37] value of pressure effect on the Curie temperature T C for V-doped Sb 2 Te 3 compound, dT C /dP = −1.3 K/kbar, that suggests a common nature of magnetic interactions in both systems.…”

Section: Discussionsupporting

confidence: 87%

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Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Панфилов¹,

Grechnev²,

Fedorchenko³

et al. 2015

J. Phys.: Condens. Matter

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Magnetic susceptibility χ of Bi2−xMnxSe3 (x = 0.01−0.2) was measured in the temperature range 4.2−300 K. For all the samples, a Curie-Weiss behaviour of χ(T ) was revealed with effective magnetic moments of Mn ions corresponding to the spin value S=5/2, which couple antiferromagnetically with the paramagnetic Curie temperature Θ ∼ −50 K. In addition, for the samples of nominal composition x = 0.1 and 0.2 the effect of a hydrostatic pressure P up to 2 kbar on χ has been measured at fixed temperatures 78 and 300 K that allowed to estimate the pressure derivative of Θ to be dΘ/dP ∼ −0.8 K/kbar. Based on the observed behaviour of Θ with varied Mn concentration and pressure, a possible mechanism of interaction between localized Mn moments is discussed.

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Section: Discussionsupporting

confidence: 87%

“…[37] value of pressure effect on the Curie temperature T C for V-doped Sb 2 Te 3 compound, dT C /dP = −1.3 K/kbar, that suggests a common nature of magnetic interactions in both systems. Another principal parameter resulted from the data represented in figure 5 is the pressure derivative of the value χ 0 .…”

Section: Discussionmentioning

confidence: 89%

Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Панфилов¹,

Grechnev²,

Fedorchenko³

et al. 2015

J. Phys.: Condens. Matter

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“…Ab initio calculations [13,29,30] and experimental XANES and XAFS studies [31,32] demonstrated that chromium ions substitute trivalent bismuth ions in the Bi 2 Se 3 lattice. In agreement with this conclusion, the chromium ions were often suggested to have a 3+ oxidation state [27,33]. In [27] the evaluated S was near 1.7.…”

supporting

confidence: 53%

Coexistence of magnetic states and metamagnetism in the Bi_2-x Cr_xSe₃topological insulators

Khachatryan

Charnaya

Shevchenko

et al. 2021

EPL

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The dichalcogenide Bi2Te3 and Bi2Se3 crystals belong to the 3D topological insulator family. Doping the crystals with magnetic ions can break the time-reversal symmetry and open an energy gap at surface Dirac points. This provides the opportunity of manipulating the surface transport and observing the anomalous quantum Hall effect. We studied magnetic properties of three single-crystalline Bi2−xCrxSe3 samples with x = 0.01, 0.03, and 0.06 within a temperature range from 2 to 300 K. The dc magnetization revealed the coexistence of antiferromagnetic and ferromagnetic ordering and paramagnetism. Their significance depends on the chromium content. The ferromagnetic phase transition was suppressed by high enough magnetic field. The antiferromagnetic transition near 80 K did not shift visibly up to 50 kOe. The Curie-Weiss law approximation gave the effective magnetic moment μ eff close to 4.9 μB, which corresponds to divalent chromium ions. Metamagnetic phenomena were found for crystals with x = 0.03 and 0.06.

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“…To understand some of these issues the current research effort in spintronics materials is also directed toward the search for potential DMS hosts. Recently it was found experimentally [14] that the semiconducting tetradymite structure material Sb 2 Te 3 acts as a DMS with T c 20 K when doped with a few per cent of V atoms. Similarly, a recent, first principles calculation, [15] indicated that transition-metal-doped SiC may be ferromagnetic with T c very close to room temperature.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and magnetism in doped semiconducting half-Heusler compounds

Nanda

Dasgupta²

2005

J. Phys.: Condens. Matter

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We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM x Y 1−x Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we have considered the interaction between the dopant transition metal (M) and the valence band X-Z hybrid. We have shown that the strong X-d -M-d interaction places the M-d states close to the Fermi level with the M-t 2g states lying higher in energy in comparison to the M-e g states. Depending on the number of available d-electrons, ferromagnetism is realized provided the d-manifold is partially occupied. The tendencies toward ferromagnetic(FM) or antiferromagnetic(AFM) behavior are discussed within Anderson-Hasegawa models of super-exchange and double-exchange. In our calculations for Mn doped NiTiSn, the strong preference for FM over AFM ordering suggests a possible high Curie temperature for these systems.

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Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb_2–xV_xTe₃

Cited by 8 publications

References 21 publications

Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Coexistence of magnetic states and metamagnetism in the Bi_2-x Cr_xSe₃topological insulators

Electronic structure and magnetism in doped semiconducting half-Heusler compounds

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Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2–xVxTe3

Cited by 8 publications

References 21 publications

Magnetic properties of Mn-doped Bi2Se3compound: temperature dependence and pressure effects

Magnetic properties of Mn-doped Bi2Se3compound: temperature dependence and pressure effects

Coexistence of magnetic states and metamagnetism in the Bi2-x CrxSe3topological insulators

Electronic structure and magnetism in doped semiconducting half-Heusler compounds

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Product

Resources

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Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb_2–xV_xTe₃

Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Magnetic properties of Mn-doped Bi₂Se₃compound: temperature dependence and pressure effects

Coexistence of magnetic states and metamagnetism in the Bi_2-x Cr_xSe₃topological insulators