Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1−xAs-based p-i-n semiconductor nanostructure

Abstract

Electron transient transport in an In x Ga 1−x As-based ͑x = 0.53͒ p-in nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T = 300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-in nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

Studies of electron–phonon and phonon–phonon interactions in InN using ultrafast Raman spectroscopy

“…We observe that the lifetime of this LO phonon mode decreases from 2.2 ps to about 0.25 ps. We notice that similar observations for GaAs and GaN have been reported by Kash et al [32,33] and Tsen et al [34], respectively, for which the physical interpretation remains unclear. Figure 10 shows corresponding results for the E 1 (LO) phonon mode.…”