Subpicosecond Raman Study of Hot Electrons and Hot Phonons in GaAs

Kim, Dai‐Sik; Yu, Peter Y.

doi:10.1007/978-1-4899-3695-0_27

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Cited by 7 publications

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“…The SPS spectrum has been found to sit on a smooth luminescence background coming from the hot electron-hole recombination associated with the E 0 bandgap of GaAs. This luminescence background has been found to be very well fitted by an exponential curve within the range of frequency shift of our interest, i.e., from −800 to 1000 cm −1 [11,12].…”

Section: Experimental Results and Analysismentioning

confidence: 56%

Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p–i–n semiconductor nanostructure

Liang

Tsen

Poweleit

et al. 2005

J. Phys.: Condens. Matter

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We report the observation of a velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to that of holes. These experimental results have been explained in terms of various carrier scattering processes. Comparisons with results obtained from other III-V semiconductors are also made and a comprehensive discussion is given.

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Section: Experimental Results and Analysismentioning

confidence: 56%