1991
DOI: 10.1063/1.104327
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Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers

Abstract: Ultrafast subpicosecond optical pulse generation is achieved by passive colliding-pulse mode locking of monolithic multiple quantum well InGaAsP semiconductor lasers. Transform-limited optical pulses with durations of 1.1, 0.83, 1.0, and 0.64 ps are achieved at repetition rates of 40, 80, 160, and 350 GHz, respectively, without using any external ac sources.

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Cited by 201 publications
(54 citation statements)
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“…For pulses below one picosecond, which roughly corresponds to the carrier thermalization time scale, the saturation energy of SOA and absorber depends on the pulsewidth due to ultrafast gain dynamics. Moreover, in the absorber, it depends on its length since the self-colliding effect helps to bleach the absorption more efficiently [14]. In the absence of ultrafast effects E SOA sat is constant.…”
Section: Resultsmentioning
confidence: 99%
“…For pulses below one picosecond, which roughly corresponds to the carrier thermalization time scale, the saturation energy of SOA and absorber depends on the pulsewidth due to ultrafast gain dynamics. Moreover, in the absorber, it depends on its length since the self-colliding effect helps to bleach the absorption more efficiently [14]. In the absence of ultrafast effects E SOA sat is constant.…”
Section: Resultsmentioning
confidence: 99%
“…In this configuration two pulses propagate in the cavity in opposite directions and collide in the SA, saturating it simultaneously. Due to the deep absorber saturation the colliding pulse configuration allows for stable sub-picosecond optical pulse generation [12]. In linear laser configuration this technique is very sensitive to the position of SA, whereas in the ring cavity SA can be located freely.…”
Section: Mode-locked Ring Laser Geometrymentioning
confidence: 99%
“…Since the absorption recovery time sets an upper limit on the achievable repetition rate in a passively mode-locked semiconductor laser, the measured recovery time implies that very high frequency mode locking (e.g., 100 GHz) is possible. Experimentally, semiconductor lasers have been passively mode locked with repetition rates as high as 10 GHz in external cavity lasers, and up to 350 GHz in monolithic cavity mode-locked lasers [18]. The very fast recovery time of waveguide saturable absorbers can be used to suppress multiple pulse formation induced by imperfect antireflection coatings [ 161.…”
Section: Cavity Lasersmentioning
confidence: 99%