Subpicosecond electrical pulse generation by edge illumination of silicon and indium phosphide photoconductive switches

Wang, Chia‐Chi; Currie, Marc; Sobolewski, Roman; Hsiang, Thomas Y.

doi:10.1063/1.115513

Cited by 17 publications

(5 citation statements)

References 8 publications

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“…The ultrabroad bandwidth might be due to the specific scheme where the pump beam was illuminated on the edge of one of the PDA electrodes. [21][22][23] For the edge illumination scheme, the transient current in the PDA results from the dielectric relaxation of the space-charge field such that its dynamics is not determined by the carrier lifetime. 24 So far, the broadest bandwidth from a PDA emitter-sensor pair is ∼15 THz, 25 although a very distinguished spectral gap related to the TO phonon band of the substrate was exhibited.…”

Section: Broadband Thz Generationmentioning

confidence: 99%

Organic Broadband TeraHertz Sources and Sensors

Zheng¹,

McLaughlin²,

Cunningham³

et al. 2007

Journal of Nanoelectronics and Optoelectronics

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We review recent research using organic materials for generation and detection of broadband terahertz radiation (0.3 THz−30 THz). The main focus is on amorphous electrooptic (EO) polymers, with semiconducting polymers, molecular salt EO crystals, and molecular solutions briefly discussed. The advantages of amorphous EO polymers over other materials for broadband THz generation (via optical rectification) and detection (via EO sampling) include a lack of phonon absorption (good transparency) in the THz regime, high EO coefficient and good phase-matching properties, and, of course, easy fabrication (low cost). Our ∼12-THz, spectral gap-free THz system based on a polymer emitter-sensor pair is an excellent demonstration of the advantages using of EO polymers. We also present a model that can predict the performance of a polymer-based THz system. Both the dielectric properties of an EO polymer and laser pulse related parameters are included in the model, making the simulations close to real conditions. From our modeling work, the roles the dielectric properties play in the THz generation and detection are clearly seen, providing us with a good guide to select and design suitable EO polymers in the future.

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Section: Broadband Thz Generationmentioning

confidence: 99%

Organic Broadband TeraHertz Sources and Sensors

Zheng¹,

McLaughlin²,

Cunningham³

et al. 2007

Journal of Nanoelectronics and Optoelectronics

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“…Through Maxwell's equations, this field change with time produces a displacement current and, therefore, a current pulse will propagate on the transmission line. Experiments by Alexandrou et al, 12 involving a detailed study of the asymmetric illumination of transmission lines on semi-insulating ͑SI͒ GaAs, and by C.-C. Wang et al, 13 demonstrating the material independence of the electrical pulse generation mechanism in Si and InP, confirm many of the predictions of the Sano and Shibata theory. Further development of this theory has been carried out through detailed Monte Carlo simulations by Zhou et al 14 On the other hand, Keil and Dykaar 6 argue that initially it is the voltage that is time varying, and not the local field in the excitation region.…”

Section: Introductionmentioning

confidence: 58%

Ultrafast high-field carrier transport in a GaAs photoconductive switch

Cummings

Holzman

Elezzabi

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Utilizing 18 fs optical pulses, field screening, and carrier dynamics which occur in the high-field region of an edge-illuminated coplanar transmission line are investigated. It is found, through the use of transient pump-probe reflectivity measurements, that the ballistic acceleration of carriers and subsequent field screening dominate the ultrashort electrical pulse generation for an edge-illuminated photoconductive switch. The formation of an instantaneous macroscopic polarization and phonon-plasmon modes are also observed. In addition, lattice and plasmon contributions to the field screening are found to be highly dependent on the excitation position within the gap. The measurements suggest that sub-100 fs electrical pulses can be generated.

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“…Assuming that the number of electrons in each pixel is linearly proportional the incident radiant flux (7a) (7b) where is the intensity contribution from the EO effect alone. Combining (4), (5), (7a), and (7b) yields (8) where (9) In the small-signal limit, (8) becomes (10a) where (10b) Equation (10a) describes the fraction of electrons in each pixel attributed to the EO effect. We now consider how to use this information to optimize the system sensitivity.…”

Section: B Interferometer Operation With An Integrating Detectormentioning

confidence: 99%

Subpicosecond imaging system based on electrooptic effect

Jacobs‐Perkins

Currie

Williams³

et al. 1996

IEEE J. Select. Topics Quantum Electron.

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This work presents an ultrafast, interferometric electrooptic sampling system that uses a two-dimensional detector array to image the electric field present on a device. Spatial and temporal resolution are comparable to conventional "point" electrooptic sampling systems, <5 m and <1 ps, respectively. Voltage sensitivity is expected to be 270 mV and may achieve less than 4 mV with sensor cooling and a more effective electrooptic material. A coplanar silicon structure with 10-m feature size would have a field sensitivity of 27 kV/m and 400 V/m, respectively. This compares favorably with the reported sensitivity of 10 5 V/m for prior imagers and 10 V/m for point samplers. Applications for an E-field "imager" include characterization of field distributions in planar passive microwave devices, multiport analog and digital devices, and studying device and materials physics.

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Subpicosecond electrical pulse generation by edge illumination of silicon and indium phosphide photoconductive switches

Cited by 17 publications

References 8 publications

Organic Broadband TeraHertz Sources and Sensors

Organic Broadband TeraHertz Sources and Sensors

Ultrafast high-field carrier transport in a GaAs photoconductive switch

Subpicosecond imaging system based on electrooptic effect

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