Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

Brockman, J.; Gao, Li; Hughes, Brian; Rettner, Charles; Samant, Mahesh G.; Roche, K. P.; Parkin, Stuart S. P.

doi:10.1038/nnano.2014.71

Cited by 89 publications

(91 citation statements)

References 28 publications

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“…Figure 2 a shows representative top‐view scanning electron microscope (SEM) image of the V 2 O 3 skeletons in a domain, demonstrating a uniform and 3D bicontinuous nanoporous structure that consists of periodic walls and open nanopores with characteristic length scales of ≈28 and ≈360 nm, respectively (Figure S3, Supporting Information). High‐resolution transmission electron microscope (HRTEM) image reveals the crystalline nature of the V 2 O 3 network (Figure 2b), in which an interplanar spacing of ≈0.278 nm corresponds to the distance of V–V pairs in (0001) plane of a corundum‐type crystalline structure generated by the structure change from monoclinic insulating state at IMT 38, 39, 43. The corundum structure of V 2 O 3 at ambient temperature is further substantiated by Raman spectrum (blue curve in Figure 2c) and X‐ray diffraction pattern (Figure S4a, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…b) Galvanostatic charge/discharge profiles at various current densities for NP V 2 O 3 /MnO 2 based pseudocapacitors. c) Volumetric capacitance of NP V 2 O 3 /MnO 2 electrodes as a function of different current densities, comparing with these of SWNT/rGO fibers,11 graphene/CNT carpets,12 liquid‐mediated CCG film,13 SWNTs,14 AC,14 NP Ni/Ni(OH) 2 ,39 and commercial supercapacitor (5.5 V/100 mF SC) 11. d) Specific capacitance of the constituent MnO 2 in the NP V 2 O 3 /MnO 2 hybrid electrode as a function of scan rate, in comparison with that of NP MnO 2 supported by CNT sponges,29 SWNT films,30 NP Au,57 and stainless steel substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Because of metallization via a first‐order IMT above the transition temperature, V 2 O 3 behaves as a half‐filled metal with a 3 d 2 state at ambient temperature 38, 39, 43. Therefore, the 3D bicontinuous V 2 O 3 skeleton works as a conductive scaffold for the incorporation of pseudocapacitive MnO 2 nanocrystals.…”

Section: Resultsmentioning

confidence: 99%

“…Unlike transitions to superconductivity only taking place below the critical transition temperature, IMTs happen as temperature increases and thus enable these strongly correlated materials to behave metallic state in their high‐temperature phases,36, 37, 38, 39 which is expected to have practical applications. In this work, we report a classic strongly correlated TMO, vanadium sesquioxide (V 2 O 3 ), with a 3D bicontinuous nanoporous architecture (NP V 2 O 3 ) as a conductive network penetrating in all‐ceramic hybrid electrodes of V 2 O 3 /MnO 2 (NP V 2 O 3 /MnO 2 ) for high‐performance pseudocapacitors.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we report a classic strongly correlated TMO, vanadium sesquioxide (V 2 O 3 ), with a 3D bicontinuous nanoporous architecture (NP V 2 O 3 ) as a conductive network penetrating in all‐ceramic hybrid electrodes of V 2 O 3 /MnO 2 (NP V 2 O 3 /MnO 2 ) for high‐performance pseudocapacitors. Therein, the 3D NP V 2 O 3 core skeleton with a corundum‐type crystalline structure becomes highly conductive at ambient temperature as a consequence of metallization via IMT 38, 39. The interpenetrating nanopores provide not only fast ion transport channels but abundant V 2 O 3 /MnO 2 epitaxial interfaces that dramatically enhance both the interfacial electron transfer via V—O—Mn chemical bonding and the electrical conductivity of the insulting MnO 2 layer by the formation of semiconductive region.…”

Section: Introductionmentioning

confidence: 99%

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Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

et al. 2016

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Nanostructured transition‐metal oxides can store high‐density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron‐correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V2O3/MnO2) have enhanced conductivity because of metallization of electron‐correlated V2O3 skeleton via insulator‐to‐metal transition. The conductive V2O3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V2O3/MnO2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO2. Symmetric pseudocapacitors assembled with binder‐free NP V2O3/MnO2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm23) while maintaining the high volumetric energy of thin‐film lithium battery with excellent stability.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

et al. 2016

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Resistive Switching in Mott Insulators and Correlated Systems

Janod

Tranchant

Corraze

et al. 2015

Adv Funct Materials

152

129

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International audienceResistive random access memories (ReRAM) form an emerging type of non-volatile memories, based on an electrically driven resistive switching (RS) of an active material. This Feature Article focuses on a broad class of ReRAM where the active material is a Mott insulator or a correlated system. These materials can indeed undergo various insulator-to-metal transitions (IMT) in response to external perturbations such as electronic doping or temperature. These IMT explain most of resistive switching observed in correlated insulators as, for example, the Joule heating induced RS in VO2. The main part of this Feature Article is dedicated to a new mechanism of resistive switching recently unveiled in canonical Mott insulators such as (V1-xCrx)2O3, NiS2-xSex and AM4Q8 (A = Ga, Ge; M = V, Nb, Ta, Mo; Q = S, Se, Te). In these narrow gap Mott insulators, an electronic avalanche breakdown induces a resistive switching, first volatile above a threshold electric field of a few kV/cm and then non-volatile at higher field. The low resistance state is related to the creation of granular conductive filaments, which, in the non-volatile case, can be erased by means of Joule heating. ReRAM devices based on this new type of out of equilibrium Mott insulator-to-metal transition display promising performances

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Selective High‐Frequency Mechanical Actuation Driven by the VO₂ Electronic Instability

et al. 2017

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This is the pre-peer reviewed version of the following article: "N. Manca et al. Adv. Mater. 29 (4), 1701618 (2017)", which has been published in final form at: http: //doi.wiley.com/10.1002/adma.201701618. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.Ultra-thin free-standing structures such as membranes or microbridges can efficiently couple their mechanical degrees of freedom to electronic, optical and magnetic interactions in different excitation/response schemes [1][2][3][4]. The use of materials with intrinsic functionalities and complex response to external stimuli constitutes the keystone towards next-generation miniaturized sensors and actuators [5][6][7][8]. To this purpose, transition metal oxides are a unique class of materials, where the balance between electronic correlations, magnetic ordering and lattice distortions gives rise to phase transitions and nonlinear behaviours [9,10]. Among them, VO 2 is considered a textbook example due to its metal-insulator transition associated with a crystal symmetry change when its temperature is increased above 65 • C [11]. The phase transition of VO 2 is at the same time a puzzling mix of Mott physics, structural distortions [12][13][14][15] and a unique candidate for a variety of technological applications [16][17][18][19][20][21]. One of the most fascinating characteristics of VO 2 is the possibility of realizing a current/voltage periodic instability under constant electrical bias that determines electrical oscillations. Spontaneous oscillations are a hallmark of non-linear systems [22], and in VO 2 they are triggered by the strong non-linear variation of its electrical properties across the phase transition. This oscillating state has been investigated in VO 2 bulk crystals [23,24] and more recently in single-crystal nano-beams and thin films [25,26]. Several studies showed how it is possible to control the frequency and the onset of this oscillating state by external parameters, such as device geometry, electrical bias, laser heating or by connecting electrical passive elements [27][28][29][30]. So far all these studies focused on the analysis of the electrical characteristics of this oscillating state, considering it a potential platform for neural-mimicking computing architectures [31][32][33][34]. However, since the phase transition of VO 2 involves both its electronic and lattice properties, electrical oscillations shall also determine a strong periodic mechanical forces on the device structure, whose implications have not been studied so far. * n.manca@tudelft.nl; nicola.manca@spin.cnr.itHere, we demonstrate how the coupled resistive and structural transition of VO 2 can be employed to generate mechanical excitations in the MHz range using only a DC voltage source. This is a local self-actuation mechanism capable of driving the motion of a micro-mechanical resonator, performing a direct transduction from a voltage bias to high-frequency mechanical excitation which relies on the ...

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Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

Cited by 89 publications

References 28 publications

Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

Resistive Switching in Mott Insulators and Correlated Systems

Selective High‐Frequency Mechanical Actuation Driven by the VO₂ Electronic Instability

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Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide

Cited by 89 publications

References 28 publications

Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

Ultrahigh‐Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron‐Correlated Oxides

Resistive Switching in Mott Insulators and Correlated Systems

Selective High‐Frequency Mechanical Actuation Driven by the VO2 Electronic Instability

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Selective High‐Frequency Mechanical Actuation Driven by the VO₂ Electronic Instability