2017
DOI: 10.1016/j.sse.2017.05.008
|View full text |Cite
|
Sign up to set email alerts
|

Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1–1.5 THz

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2019
2019
2022
2022

Publication Types

Select...
2
2
1

Relationship

0
5

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 25 publications
0
3
0
Order By: Relevance
“…Furthermore, a heavily doped epitaxial layer (typically >10 18 cm −3 ) is generally used to maintain a low series resistance. More thorough design and optimization guidelines can be found in [21,24]. GaAs has been the most popular choice of semiconductor for terahertz Schottky diode mixers due to its high mobility, large bandgap energy, and mature fabrication processes [25].…”
Section: Schottky Diode Mixersmentioning
confidence: 99%
“…Furthermore, a heavily doped epitaxial layer (typically >10 18 cm −3 ) is generally used to maintain a low series resistance. More thorough design and optimization guidelines can be found in [21,24]. GaAs has been the most popular choice of semiconductor for terahertz Schottky diode mixers due to its high mobility, large bandgap energy, and mature fabrication processes [25].…”
Section: Schottky Diode Mixersmentioning
confidence: 99%
“…Advances and promises in the development of the terahertz power sources over the last two decades [1]- [3], as well as emerging commercial applications, have led to the increased efforts in the development of circuits and systems for use at the submillimeter wave (low-terahertz) frequencies. Components, including antennas [4]- [6], waveguides [6]- [8], filters [9], [10], diodes and transistors [11]- [13], and photonic devices [14]- [16], are being customized for use in this spectral region. Schottky diodes, used in mixers, multipliers, phase shifters, and detectors, have to be designed using approaches aimed at reducing the capacitances, in efforts to extend the frequencies of operation up to 1.5 THz [11].…”
Section: Introductionmentioning
confidence: 99%
“…Components, including antennas [4]- [6], waveguides [6]- [8], filters [9], [10], diodes and transistors [11]- [13], and photonic devices [14]- [16], are being customized for use in this spectral region. Schottky diodes, used in mixers, multipliers, phase shifters, and detectors, have to be designed using approaches aimed at reducing the capacitances, in efforts to extend the frequencies of operation up to 1.5 THz [11]. Likewise, graphene-channel field-effect transistors are being developed, which can, with a careful design, help increase the cutoff frequencies to the terahertz range [12].…”
Section: Introductionmentioning
confidence: 99%